Inventor
CHOU LI-WEI
TW19 patents
⚠️ This page may combine multiple inventors who share the name “CHOU LI-WEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
14 patentsUS11101209B2Aug 24, 2021
Redistribution structures in semiconductor packages and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD20 citations94
US10490552B2Nov 26, 2019
FinFET device having flat-top epitaxial features and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD16 citations86
US11101347B2Aug 24, 2021
Confined source/drain epitaxy regions and method forming same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations83
US11948971B2Apr 2, 2024
Confined source/drain epitaxy regions and method forming same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations74
US11037826B2Jun 15, 2021
Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10879128B2Dec 29, 2020
Semiconductor device and method of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10546784B2Jan 28, 2020
Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US12363993B2Jul 15, 2025
Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12142560B2Nov 12, 2024
Semiconductor packages and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11908742B2Feb 20, 2024
Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11769771B2Sep 26, 2023
FinFET device having flat-top epitaxial features and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11276693B2Mar 15, 2022
FinFET device having flat-top epitaxial features and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US10049936B2Aug 14, 2018
Semiconductor device having merged epitaxial features with Arc-like bottom surface and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12439657B2Oct 7, 2025
Confined source/drain epitaxy regions and method forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51