P

Inventor

METZ ANDREW

US27 patents
⚠️ This page may combine multiple inventors who share the name “METZ ANDREW”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOKYO ELECTRON LTD

26 patents
US9257529B2Feb 9, 2016

Method of forming self-aligned contacts using a replacement metal gate process in a semiconductor device

TOKYO ELECTRON LTD14 citations83
US11195723B1Dec 7, 2021

Non-atomic layer deposition (ALD) method of forming sidewall passivation layer during high aspect ratio carbon layer etch

TOKYO ELECTRON LTD5 citations82
US11482454B2Oct 25, 2022

Methods for forming self-aligned contacts using spin-on silicon carbide

TOKYO ELECTRON LTD2 citations71
US12288692B2Apr 29, 2025

Method of forming a FET structure by selective deposition of film on source/drain contact

TOKYO ELECTRON LTD0 citations62
US11127594B2Sep 21, 2021

Manufacturing methods for mandrel pull from spacers for multi-color patterning

TOKYO ELECTRON LTD0 citations62
US12354842B2Jul 8, 2025

In-situ focus ring coating

TOKYO ELECTRON LTD0 citations61
US12334356B2Jun 17, 2025

Plasma etching tools and systems

TOKYO ELECTRON LTD0 citations61
US12080599B2Sep 3, 2024

Methods for forming self-aligned contacts using spin-on silicon carbide

TOKYO ELECTRON LTD0 citations61
US11978631B2May 7, 2024

Forming contact holes with controlled local critical dimension uniformity

TOKYO ELECTRON LTD1 citations61
US11651967B2May 16, 2023

Non-atomic layer deposition (ALD) method of forming sidewall passivation layer during high aspect ratio carbon layer etch

TOKYO ELECTRON LTD0 citations61
US11538692B2Dec 27, 2022

Cyclic plasma etching of carbon-containing materials

TOKYO ELECTRON LTD0 citations61
US11495436B2Nov 8, 2022

Systems and methods to control critical dimension (CD) shrink ratio through radio frequency (RF) pulsing

TOKYO ELECTRON LTD0 citations61
US11227774B2Jan 18, 2022

Methods and systems for etching silicon cyanide (SiCN) with multi-color selectivity

TOKYO ELECTRON LTD0 citations61
US10950444B2Mar 16, 2021

Metal hard mask layers for processing of microelectronic workpieces

TOKYO ELECTRON LTD1 citations61
US10937659B2Mar 2, 2021

Method of anisotropically etching adjacent lines with multi-color selectivity

TOKYO ELECTRON LTD0 citations61
US12341009B2Jun 24, 2025

Variable hardness amorphous carbon mask

TOKYO ELECTRON LTD0 citations60
US12266533B2Apr 1, 2025

Sacrificial capping layer for contact etch

TOKYO ELECTRON LTD0 citations60
US12040176B2Jul 16, 2024

Technologies for high aspect ratio carbon etching with inserted charge dissipation layer

TOKYO ELECTRON LTD0 citations59
US12211911B2Jan 28, 2025

Recessed contact structures and methods

TOKYO ELECTRON LTD0 citations56
US11532517B2Dec 20, 2022

Localized etch stop layer

TOKYO ELECTRON LTD0 citations51
US12266534B2Apr 1, 2025

Forming a semiconductor device using a protective layer

TOKYO ELECTRON LTD0 citations50
US10950460B2Mar 16, 2021

Method utilizing using post etch pattern encapsulation

TOKYO ELECTRON LTD0 citations50
US11961735B2Apr 16, 2024

Cyclic plasma processing

TOKYO ELECTRON LTD0 citations48
US12400872B2Aug 26, 2025

Sacrificial capping layer for gate protection

TOKYO ELECTRON LTD0 citations47
US12191202B2Jan 7, 2025

Contact openings in semiconductor devices

TOKYO ELECTRON LTD0 citations47
US9368368B2Jun 14, 2016

Method for increasing oxide etch selectivity

TOKYO ELECTRON LTD0 citations41

MARKS TOBIN J

1 patent