Inventor
METZ ANDREW
US27 patents
⚠️ This page may combine multiple inventors who share the name “METZ ANDREW”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOKYO ELECTRON LTD
26 patentsUS9257529B2Feb 9, 2016
Method of forming self-aligned contacts using a replacement metal gate process in a semiconductor device
TOKYO ELECTRON LTD14 citations83
US11195723B1Dec 7, 2021
Non-atomic layer deposition (ALD) method of forming sidewall passivation layer during high aspect ratio carbon layer etch
TOKYO ELECTRON LTD5 citations82
US11482454B2Oct 25, 2022
Methods for forming self-aligned contacts using spin-on silicon carbide
TOKYO ELECTRON LTD2 citations71
US12288692B2Apr 29, 2025
Method of forming a FET structure by selective deposition of film on source/drain contact
TOKYO ELECTRON LTD0 citations62
US11127594B2Sep 21, 2021
Manufacturing methods for mandrel pull from spacers for multi-color patterning
TOKYO ELECTRON LTD0 citations62
US12354842B2Jul 8, 2025
In-situ focus ring coating
TOKYO ELECTRON LTD0 citations61
US12334356B2Jun 17, 2025
Plasma etching tools and systems
TOKYO ELECTRON LTD0 citations61
US12080599B2Sep 3, 2024
Methods for forming self-aligned contacts using spin-on silicon carbide
TOKYO ELECTRON LTD0 citations61
US11978631B2May 7, 2024
Forming contact holes with controlled local critical dimension uniformity
TOKYO ELECTRON LTD1 citations61
US11651967B2May 16, 2023
Non-atomic layer deposition (ALD) method of forming sidewall passivation layer during high aspect ratio carbon layer etch
TOKYO ELECTRON LTD0 citations61
US11538692B2Dec 27, 2022
Cyclic plasma etching of carbon-containing materials
TOKYO ELECTRON LTD0 citations61
US11495436B2Nov 8, 2022
Systems and methods to control critical dimension (CD) shrink ratio through radio frequency (RF) pulsing
TOKYO ELECTRON LTD0 citations61
US11227774B2Jan 18, 2022
Methods and systems for etching silicon cyanide (SiCN) with multi-color selectivity
TOKYO ELECTRON LTD0 citations61
US10950444B2Mar 16, 2021
Metal hard mask layers for processing of microelectronic workpieces
TOKYO ELECTRON LTD1 citations61
US10937659B2Mar 2, 2021
Method of anisotropically etching adjacent lines with multi-color selectivity
TOKYO ELECTRON LTD0 citations61
US12341009B2Jun 24, 2025
Variable hardness amorphous carbon mask
TOKYO ELECTRON LTD0 citations60
US12266533B2Apr 1, 2025
Sacrificial capping layer for contact etch
TOKYO ELECTRON LTD0 citations60
US12040176B2Jul 16, 2024
Technologies for high aspect ratio carbon etching with inserted charge dissipation layer
TOKYO ELECTRON LTD0 citations59
US12211911B2Jan 28, 2025
Recessed contact structures and methods
TOKYO ELECTRON LTD0 citations56
US11532517B2Dec 20, 2022
Localized etch stop layer
TOKYO ELECTRON LTD0 citations51
US12266534B2Apr 1, 2025
Forming a semiconductor device using a protective layer
TOKYO ELECTRON LTD0 citations50
US10950460B2Mar 16, 2021
Method utilizing using post etch pattern encapsulation
TOKYO ELECTRON LTD0 citations50
US11961735B2Apr 16, 2024
Cyclic plasma processing
TOKYO ELECTRON LTD0 citations48
US12400872B2Aug 26, 2025
Sacrificial capping layer for gate protection
TOKYO ELECTRON LTD0 citations47
US12191202B2Jan 7, 2025
Contact openings in semiconductor devices
TOKYO ELECTRON LTD0 citations47
US9368368B2Jun 14, 2016
Method for increasing oxide etch selectivity
TOKYO ELECTRON LTD0 citations41