P

Inventor

Yu de-wei

TW45 patents
⚠️ This page may combine multiple inventors who share the name “Yu de-wei”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

38 patents
US9634141B1Apr 25, 2017

Interlayer dielectric film in semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD16 citations93
US10249530B2Apr 2, 2019

Interlayer dielectric film in semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10332746B1Jun 25, 2019

Post UV cure for gapfill improvement

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations83
US10868140B2Dec 15, 2020

Gap-filling germanium through selective bottom-up growth

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10784106B2Sep 22, 2020

Selective film growth for bottom-up gap filling

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10510865B2Dec 17, 2019

Cap layer and anneal for gapfill improvement

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10170305B1Jan 1, 2019

Selective film growth for bottom-up gap filling

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10115624B2Oct 30, 2018

Method of semiconductor integrated circuit fabrication

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10008418B2Jun 26, 2018

Method of semiconductor integrated circuit fabrication

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10741674B2Aug 11, 2020

Selective silicon growth for gapfill improvement

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10535751B2Jan 14, 2020

Selective silicon growth for gapfill improvement

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US11901442B2Feb 13, 2024

Method of manufacturing a semiconductor device and a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US10504747B2Dec 10, 2019

Method of gap filling using conformal deposition-annealing-etching cycle for reducing seam void and bending

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US9450097B2Sep 20, 2016

Methods for doping Fin field-effect transistors and Fin field-effect transistor

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations63
US11710777B2Jul 25, 2023

Semiconductor device and method for manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11205709B2Dec 21, 2021

Defect filling in patterned layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11183426B2Nov 23, 2021

Method for forming a FinFET structure that prevents or reduces deformation of adjacent fins

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11114545B2Sep 7, 2021

Cap layer and anneal for gapfill improvement

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11107903B2Aug 31, 2021

Selective silicon growth for gapfill improvement

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10347741B1Jul 9, 2019

Gapfill improvement

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US9482518B2Nov 1, 2016

Systems and methods for semiconductor device process determination using reflectivity measurement

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations62
US12283622B2Apr 22, 2025

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12183590B2Dec 31, 2024

Method of performing gap filling including filling trenches between dummy gate stacks on semiconductor fins/strips with semiconductor material

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11728406B2Aug 15, 2023

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11677015B2Jun 13, 2023

Method of manufacturing a semiconductor device and a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11605543B2Mar 14, 2023

Method of gap filling using conformal deposition-annealing-etching cycle for reducing seam void and bending

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11289343B2Mar 29, 2022

Method of gap filling using conformal deposition-annealing-etching cycle for reducing seam void and bending

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10727064B2Jul 28, 2020

Post UV cure for gapfill improvement

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US12308369B2May 20, 2025

Method of manufacturing a semiconductor device and a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US10861751B2Dec 8, 2020

Method of semiconductor integrated circuit fabrication

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10685867B2Jun 16, 2020

Method of semiconductor integrated circuit fabrication

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10535557B2Jan 14, 2020

Interlayer dielectric film in semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10504724B2Dec 10, 2019

Selective film growth for bottom-up gap filling

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10483170B2Nov 19, 2019

Method of semiconductor integrated circuit fabrication

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10468501B2Nov 5, 2019

Gap-filling germanium through selective bottom-up growth

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US11444173B2Sep 13, 2022

Semiconductor device structure with salicide layer and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10868137B2Dec 15, 2020

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12288721B2Apr 29, 2025

Fin bending reduction through structure design

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49

TAIWAN SEMICONDUCTOR MFG

3 patents

TSAI CHUN HSIUNG

2 patents

FANG ZIWEI

1 patent

Yu de-wei

1 patent