Inventor
Yu de-wei
TW45 patents
⚠️ This page may combine multiple inventors who share the name “Yu de-wei”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
38 patentsUS9634141B1Apr 25, 2017
Interlayer dielectric film in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD16 citations93
US10249530B2Apr 2, 2019
Interlayer dielectric film in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10332746B1Jun 25, 2019
Post UV cure for gapfill improvement
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations83
US10868140B2Dec 15, 2020
Gap-filling germanium through selective bottom-up growth
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10784106B2Sep 22, 2020
Selective film growth for bottom-up gap filling
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10510865B2Dec 17, 2019
Cap layer and anneal for gapfill improvement
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10170305B1Jan 1, 2019
Selective film growth for bottom-up gap filling
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10115624B2Oct 30, 2018
Method of semiconductor integrated circuit fabrication
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10008418B2Jun 26, 2018
Method of semiconductor integrated circuit fabrication
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10741674B2Aug 11, 2020
Selective silicon growth for gapfill improvement
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10535751B2Jan 14, 2020
Selective silicon growth for gapfill improvement
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US11901442B2Feb 13, 2024
Method of manufacturing a semiconductor device and a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US10504747B2Dec 10, 2019
Method of gap filling using conformal deposition-annealing-etching cycle for reducing seam void and bending
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US9450097B2Sep 20, 2016
Methods for doping Fin field-effect transistors and Fin field-effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations63
US11710777B2Jul 25, 2023
Semiconductor device and method for manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11205709B2Dec 21, 2021
Defect filling in patterned layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11183426B2Nov 23, 2021
Method for forming a FinFET structure that prevents or reduces deformation of adjacent fins
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11114545B2Sep 7, 2021
Cap layer and anneal for gapfill improvement
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11107903B2Aug 31, 2021
Selective silicon growth for gapfill improvement
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10347741B1Jul 9, 2019
Gapfill improvement
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US9482518B2Nov 1, 2016
Systems and methods for semiconductor device process determination using reflectivity measurement
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations62
US12283622B2Apr 22, 2025
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12183590B2Dec 31, 2024
Method of performing gap filling including filling trenches between dummy gate stacks on semiconductor fins/strips with semiconductor material
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11728406B2Aug 15, 2023
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11677015B2Jun 13, 2023
Method of manufacturing a semiconductor device and a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11605543B2Mar 14, 2023
Method of gap filling using conformal deposition-annealing-etching cycle for reducing seam void and bending
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11289343B2Mar 29, 2022
Method of gap filling using conformal deposition-annealing-etching cycle for reducing seam void and bending
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10727064B2Jul 28, 2020
Post UV cure for gapfill improvement
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US12308369B2May 20, 2025
Method of manufacturing a semiconductor device and a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US10861751B2Dec 8, 2020
Method of semiconductor integrated circuit fabrication
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10685867B2Jun 16, 2020
Method of semiconductor integrated circuit fabrication
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10535557B2Jan 14, 2020
Interlayer dielectric film in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10504724B2Dec 10, 2019
Selective film growth for bottom-up gap filling
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10483170B2Nov 19, 2019
Method of semiconductor integrated circuit fabrication
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10468501B2Nov 5, 2019
Gap-filling germanium through selective bottom-up growth
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US11444173B2Sep 13, 2022
Semiconductor device structure with salicide layer and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10868137B2Dec 15, 2020
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12288721B2Apr 29, 2025
Fin bending reduction through structure design
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49
TAIWAN SEMICONDUCTOR MFG
3 patentsUS9209280B2Dec 8, 2015
Methods for doping fin field-effect transistors
TAIWAN SEMICONDUCTOR MFG3 citations63
US8883522B2Nov 11, 2014
System for semiconductor device characterization using reflectivity measurement
TAIWAN SEMICONDUCTOR MFG2 citations62
US9324865B2Apr 26, 2016
Method of forming a semiconductor device
TAIWAN SEMICONDUCTOR MFG0 citations52