Inventor
WOO BEEN-JON
US14 patents
⚠️ This page may combine multiple inventors who share the name “WOO BEEN-JON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTEL CORP
13 patentsUS5075245ADec 24, 1991
Method for improving erase characteristics of buried bit line flash EPROM devices without using sacrificial oxide growth and removal steps
INTEL CORP81 citations96
US4728617AMar 1, 1988
Method of fabricating a MOSFET with graded source and drain regions
INTEL CORP121 citations94
US5470772ANov 28, 1995
Silicidation method for contactless EPROM related devices
INTEL CORP32 citations92
US5229631AJul 20, 1993
Erase performance improvement via dual floating gate processing
INTEL CORP50 citations92
US5147813ASep 15, 1992
Erase performance improvement via dual floating gate processing
INTEL CORP43 citations92
US5102814AApr 7, 1992
Method for improving device scalability of buried bit line flash EPROM devices having short reoxidation beaks and shallower junctions
INTEL CORP43 citations92
US5077230ADec 31, 1991
Method for improving erase characteristics of buried bit line flash EPROM devices by use of a thin nitride layer formed during field oxide growth
INTEL CORP25 citations92
US4833099AMay 23, 1989
Tungsten-silicide reoxidation process including annealing in pure nitrogen and subsequent oxidation in oxygen
INTEL CORP28 citations92
US4784965ANov 15, 1988
Source drain doping technique
INTEL CORP33 citations91
US4757026AJul 12, 1988
Source drain doping technique
INTEL CORP54 citations91
US4774201ASep 27, 1988
Tungsten-silicide reoxidation technique using a CVD oxide cap
INTEL CORP21 citations81
US5196361AMar 23, 1993
Method of making source junction breakdown for devices with source-side erasing
INTEL CORP11 citations73
US7632736B2Dec 15, 2009
Self-aligned contact formation utilizing sacrificial polysilicon
INTEL CORP3 citations59