Inventor
HAYAFUJI NORIO
JP26 patents
Patents
26 patentsUS5796127AAug 18, 1998
High electron mobility transistor
MITSUBISHI ELECTRIC CORP224 citations99
US5100480AMar 31, 1992
Solar cell and method for manufacturing the same
MITSUBISHI ELECTRIC CORP124 citations98
US5760426AJun 2, 1998
Heteroepitaxial semiconductor device including silicon substrate, GaAs layer and GaN layer #13
MITSUBISHI ELECTRIC CORP165 citations97
US5764673AJun 9, 1998
Semiconductor light emitting device
MITSUBISHI ELECTRIC CORP55 citations95
US6358316B1Mar 19, 2002
Method for producing semiconductor device, method for producing semiconductor laser device, and method for producing quantum wire structure
MITSUBISHI ELECTRIC CORP45 citations92
US5811843ASep 22, 1998
Field effect transistor
MITSUBISHI ELECTRIC CORP28 citations92
US5728215AMar 17, 1998
Method for forming a film by selective area MOCVD growth
MITSUBISHI ELECTRIC CORP23 citations92
US5729030AMar 17, 1998
Semiconductor device
MITSUBISHI ELECTRIC CORP19 citations92
US5701321ADec 23, 1997
Semiconductor laser producing short wavelength light
MITSUBISHI ELECTRIC CORP49 citations92
US5677922AOct 14, 1997
Semiconductor laser with crystalline window layer
MITSUBISHI ELECTRIC CORP19 citations92
US5439723AAug 8, 1995
Substrate for producing semiconductor wafer
MITSUBISHI ELECTRIC CORP28 citations92
US5426658AJun 20, 1995
Semiconductor laser including ridge confining buffer layer
MITSUBISHI ELECTRIC CORP27 citations92
US5316967AMay 31, 1994
Method for producing semiconductor device
MITSUBISHI ELECTRIC CORP24 citations92
US5602414AFeb 11, 1997
Infrared detector having active regions and isolating regions formed of CdHgTe
MITSUBISHI ELECTRIC CORP26 citations90
US5387544AFeb 7, 1995
Method of making a semiconductor device including carbon as a dopant
MITSUBISHI ELECTRIC CORP15 citations82
US5279077AJan 18, 1994
Method for producing semiconductor wafer
MITSUBISHI ELECTRIC CORP17 citations82
US6037242AMar 14, 2000
Method of making hetero-structure
MITSUBISHI ELECTRIC CORP7 citations74
US5805628ASep 8, 1998
Semiconductor laser
MITSUBISHI ELECTRIC CORP8 citations74
US5682045AOct 28, 1997
Method of fabricating semiconductor device and semiconductor device fabricated thereby
MITSUBISHI ELECTRIC CORP8 citations74
US5420066AMay 30, 1995
Method for producing semiconductor laser device using etch stop layer
MITSUBISHI ELECTRIC CORP11 citations73
US5357535AOct 18, 1994
Semiconductor laser including an aluminum-rich AlGaAs etch stopping layer
MITSUBISHI ELECTRIC CORP7 citations73
US5573960ANov 12, 1996
Method of manufacturing semiconductor layers by bonding without defects created by bonding
MITSUBISHI ELECTRIC CORP8 citations71
US5874753AFeb 23, 1999
Field effect transistor
MITSUBISHI ELECTRIC CORP5 citations63
US5394417AFeb 28, 1995
Semiconductor laser producing visible light
MITSUBISHI ELECTRIC CORP4 citations62
US5315133AMay 24, 1994
Compound semiconductor structure including p-type and n-type regions doped with carbon
MITSUBISHI ELECTRIC CORP0 citations52
US5467731ANov 21, 1995
Method of producing a semiconductor structure including a recrystallized film
MITSUBISHI ELECTRIC CORP0 citations41