Inventor
NANSEI HIROYUKI
JP22 patents
⚠️ This page may combine multiple inventors who share the name “NANSEI HIROYUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SPANSION LLC
8 patentsUS7253046B2Aug 7, 2007
Semiconductor memory device and manufacturing method thereof
SPANSION LLC45 citations95
US7410857B2Aug 12, 2008
Semiconductor memory device and manufacturing method thereof
SPANSION LLC30 citations92
US8357965B2Jan 22, 2013
Semiconductor device having multiple storage regions
SPANSION LLC2 citations62
US7888209B2Feb 15, 2011
Non-volatile sonos-type memory device
SPANSION LLC2 citations62
US7675107B2Mar 9, 2010
Non-volatile SONOS-type memory device
SPANSION LLC4 citations62
US9231112B2Jan 5, 2016
Convex shaped thin-film transistor device having elongated channel over insulating layer
SPANSION LLC0 citations52
US7479427B2Jan 20, 2009
Semiconductor device and method of fabrication
SPANSION LLC0 citations52
US7274592B2Sep 25, 2007
Non-volatile memory and method of controlling the same
SPANSION LLC1 citations52
TOSHIBA KK
4 patentsUS8859327B2Oct 14, 2014
Method for manufacturing a non-volatile semiconductor memory device
TOSHIBA KK2 citations62
US7879670B2Feb 1, 2011
Method of manufacturing nonvolatile storage device
TOSHIBA KK2 citations62
US9397144B2Jul 19, 2016
Non-volatile semiconductor memory device
TOSHIBA KK1 citations51
US8987909B2Mar 24, 2015
Method of manufacturing electronic component
TOSHIBA KK0 citations51
NANSEI HIROYUKI
3 patentsUS8896051B2Nov 25, 2014
Semiconductor device and method for manufacturing the same
NANSEI HIROYUKI16 citations82
US8431919B2Apr 30, 2013
Resistive change non-volatile semiconductor memory device
NANSEI HIROYUKI7 citations82
US8536048B2Sep 17, 2013
Method of manufacturing electronic component
NANSEI HIROYUKI1 citations50
MONTEREY RES LLC
2 patentsUS10256246B2Apr 9, 2019
Convex shaped thin-film transistor device having elongated channel over insulating layer in a groove of a semiconductor substrate
MONTEREY RES LLC1 citations73
US9748254B2Aug 29, 2017
Convex shaped thin-film transistor device having elongated channel over insulating layer in a groove of a semiconductor substrate
MONTEREY RES LLC0 citations52