Inventor
GOMEZ HARRY
US14 patents
⚠️ This page may combine multiple inventors who share the name “GOMEZ HARRY”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTEL CORP
8 patentsUS7732285B2Jun 8, 2010
Semiconductor device having self-aligned epitaxial source and drain extensions
INTEL CORP41 citations92
US10192783B2Jan 29, 2019
Gate contact structure over active gate and method to fabricate same
INTEL CORP4 citations83
US10026829B2Jul 17, 2018
Semiconductor device with isolated body portion
INTEL CORP8 citations83
US10847631B2Nov 24, 2020
Gate-all-around (GAA) transistors with nanowires on an isolation pedestal
INTEL CORP1 citations73
US10229981B2Mar 12, 2019
Gate-all-around (GAA) transistor with stacked nanowires on locally isolated substrate
INTEL CORP1 citations73
US11004739B2May 11, 2021
Gate contact structure over active gate and method to fabricate same
INTEL CORP1 citations72
US12278144B2Apr 15, 2025
Gate contact structure over active gate and method to fabricate same
INTEL CORP0 citations62
US9978636B2May 22, 2018
Isolated and bulk semiconductor devices formed on a same bulk substrate
INTEL CORP0 citations52
CAPPELLANI ANNALISA
5 patentsUS8313999B2Nov 20, 2012
Multi-gate semiconductor device with self-aligned epitaxial source and drain
CAPPELLANI ANNALISA70 citations97
US9608059B2Mar 28, 2017
Semiconductor device with isolated body portion
CAPPELLANI ANNALISA18 citations92
US8735869B2May 27, 2014
Strained gate-all-around semiconductor devices formed on globally or locally isolated substrates
CAPPELLANI ANNALISA22 citations92
US9484272B2Nov 1, 2016
Methods for fabricating strained gate-all-around semiconductor devices by fin oxidation using an undercut etch-stop layer
CAPPELLANI ANNALISA4 citations84
US9425212B2Aug 23, 2016
Isolated and bulk semiconductor devices formed on a same bulk substrate
CAPPELLANI ANNALISA3 citations73