Inventor
CREMONESI CARLO
IT16 patents
⚠️ This page may combine multiple inventors who share the name “CREMONESI CARLO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ST MICROELECTRONICS SRL
11 patentsUS6268247B1Jul 31, 2001
Memory cell of the EEPROM type having its threshold set by implantation, and fabrication method
ST MICROELECTRONICS SRL26 citations92
US6221717B1Apr 24, 2001
EEPROM memory cell comprising a selection transistor with threshold voltage adjusted by implantation, and related manufacturing process
ST MICROELECTRONICS SRL31 citations92
US6274411B1Aug 14, 2001
Method for manufacturing electronic devices, comprising non-salicided non-volatile memory cells, non-salicided HV transistors, and LV transistors with salicided junctions with few masks
ST MICROELECTRONICS SRL14 citations73
US6255163B1Jul 3, 2001
Process for manufacturing selection transistors for nonvolatile serial-flash, EPROM, EEPROM and flash-EEPROM memories in standard or AMG configuration
ST MICROELECTRONICS SRL8 citations73
US6194270B1Feb 27, 2001
Process for the manufacturing of an electrically programmable non-volatile memory device
ST MICROELECTRONICS SRL12 citations73
US7910444B2Mar 22, 2011
Process for forming differential spaces in electronics device integrated on a semiconductor substrate
ST MICROELECTRONICS SRL2 citations62
US6329254B1Dec 11, 2001
Memory cell of the EEPROM type having its threshold adjusted by implantation, and fabrication method
ST MICROELECTRONICS SRL6 citations62
US6180460B1Jan 30, 2001
Process for manufacturing of a non volatile memory with reduced resistance of the common source lines
ST MICROELECTRONICS SRL6 citations62
US6313480B1Nov 6, 2001
Structure and method for evaluating an integrated electronic device
ST MICROELECTRONICS SRL5 citations61
US6437395B2Aug 20, 2002
Process for the manufacturing of an electrically programmable non-volatile memory device
ST MICROELECTRONICS SRL1 citations51
US7419876B2Sep 2, 2008
Method for manufacturing non-volatile memory devices integrated in a semiconductor substrate
ST MICROELECTRONICS SRL0 citations41
SGS THOMSON MICROELECTRONICS
5 patentsUS6432762B1Aug 13, 2002
Memory cell for EEPROM devices, and corresponding fabricating process
SGS THOMSON MICROELECTRONICS9 citations73
US5985718ANov 16, 1999
Process for fabricating memory cells with two levels of polysilicon for devices of EEPROM type
SGS THOMSON MICROELECTRONICS12 citations73
US6320219B1Nov 20, 2001
Memory cell for EEPROM devices and corresponding fabricating process
SGS THOMSON MICROELECTRONICS2 citations62
US6097057AAug 1, 2000
Memory cell for EEPROM devices, and corresponding fabricating process
SGS THOMSON MICROELECTRONICS2 citations62
US6080626AJun 27, 2000
Memory cell for EEPROM devices, and corresponding fabricating process
SGS THOMSON MICROELECTRONICS1 citations51