P

Inventor

HAN JAE HYUN

KR91 patents
⚠️ This page may combine multiple inventors who share the name “HAN JAE HYUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SK HYNIX INC

32 patents
US11744087B2Aug 29, 2023

Three-dimensional resistive memory device

SK HYNIX INC2 citations73
US11508741B2Nov 22, 2022

Nonvolatile memory device having resistance change structure

SK HYNIX INC4 citations73
US11362143B2Jun 14, 2022

Nonvolatile memory device having three-dimensional structure

SK HYNIX INC5 citations73
US11114504B1Sep 7, 2021

Semiconductor device including variable resistance layer

SK HYNIX INC5 citations73
US11056648B1Jul 6, 2021

Semiconductor device including variable resistance element

SK HYNIX INC2 citations73
US12471509B2Nov 11, 2025

Method of manufacturing a semiconductor device having three-dimensional cell structure

SK HYNIX INC0 citations63
US12439585B2Oct 7, 2025

Semiconductor device and manufacturing method of semiconductor device

SK HYNIX INC0 citations63
US12382636B2Aug 5, 2025

Semiconductor device including selector layer

SK HYNIX INC0 citations63
US12063795B2Aug 13, 2024

Three-dimensional semiconductor device having variable resistance structure

SK HYNIX INC0 citations63
US11948633B2Apr 2, 2024

Resistive memory device and operating method of the resistive memory device

SK HYNIX INC0 citations63
US11871684B2Jan 9, 2024

Semiconductor device including resistance changing layer and method of manufacturing the same

SK HYNIX INC0 citations63
US11696520B2Jul 4, 2023

Semiconductor device having three-dimensional cell structure

SK HYNIX INC0 citations63
US11563172B2Jan 24, 2023

Variable resistance memory device and manufacturing method of the same

SK HYNIX INC0 citations63
US11527288B2Dec 13, 2022

Memory cell and operating method of memory cell

SK HYNIX INC0 citations63
US11437077B2Sep 6, 2022

Semiconductor device including common select line

SK HYNIX INC0 citations63
US11417707B2Aug 16, 2022

Nonvolatile memory device of three-dimensional structure including resistance change element

SK HYNIX INC1 citations63
US11410723B2Aug 9, 2022

Semiconductor device and method of operating the same

SK HYNIX INC0 citations63
US11393823B2Jul 19, 2022

Semiconductor device and manufacturing method of semiconductor device

SK HYNIX INC1 citations63
US11380844B2Jul 5, 2022

Semiconductor device including variable resistance element

SK HYNIX INC0 citations63
US12382846B2Aug 5, 2025

Ferroelectric components and cross point array devices including the ferroelectric components

SK HYNIX INC0 citations62
US12308311B2May 20, 2025

Semiconductor device including interconnection structure including MXene and method of manufacturing the same

SK HYNIX INC0 citations62
US12207572B2Jan 21, 2025

Electronic device including channel layer including variable resistance and method of manufacturing the same

SK HYNIX INC0 citations62
US12201040B2Jan 14, 2025

Electronic device including proton conductive layer and resistance change channel layer capable of receiving hydrogen

SK HYNIX INC0 citations62
US12108606B2Oct 1, 2024

Nonvolatile memory device having a ferroelectric layer

SK HYNIX INC0 citations62
US12082420B2Sep 3, 2024

Semiconductor device including interlayer insulation structure including metal-organic framework

SK HYNIX INC0 citations62
US11955529B2Apr 9, 2024

Semiconductor device with interlayer insulation structure including metal-organic framework layer and method of manufacturing the same

SK HYNIX INC0 citations62
US11943927B2Mar 26, 2024

Semiconductor memory device

SK HYNIX INC0 citations62
US11800719B2Oct 24, 2023

Nonvolatile memory device having a ferroelectric layer

SK HYNIX INC0 citations62
US11502248B2Nov 15, 2022

Ferroelectric components and cross point array devices including the ferroelectric components

SK HYNIX INC0 citations62
US11482667B2Oct 25, 2022

Nonvolatile memory device having a resistance change layer and a plurality of electrode pattern layers

SK HYNIX INC0 citations62
US11456318B2Sep 27, 2022

Nonvolatile memory device having a ferroelectric layer

SK HYNIX INC0 citations62
US11362107B2Jun 14, 2022

Nonvolatile memory device having a ferroelectric layer

SK HYNIX INC1 citations62

SAMSUNG SDI CO LTD

8 patents

LG INNOTEK CO LTD

3 patents

JEONG HAE-DONG

1 patent

KYUNGDONG NAVIEN CO LTD

1 patent

SAMSUNG ELECTRONICS CO LTD

1 patent

JANG JUNG CHEOL

1 patent

MANDO CORP

1 patent

KOREA ADVANCED INST SCI & TECH

1 patent

KUMHO TIRE CO INC

1 patent

Showing the top 50 of 91 patents by PatentIndex Score.