Inventor
HAN JAE HYUN
KR91 patents
⚠️ This page may combine multiple inventors who share the name “HAN JAE HYUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SK HYNIX INC
32 patentsUS11744087B2Aug 29, 2023
Three-dimensional resistive memory device
SK HYNIX INC2 citations73
US11508741B2Nov 22, 2022
Nonvolatile memory device having resistance change structure
SK HYNIX INC4 citations73
US11362143B2Jun 14, 2022
Nonvolatile memory device having three-dimensional structure
SK HYNIX INC5 citations73
US11114504B1Sep 7, 2021
Semiconductor device including variable resistance layer
SK HYNIX INC5 citations73
US11056648B1Jul 6, 2021
Semiconductor device including variable resistance element
SK HYNIX INC2 citations73
US12471509B2Nov 11, 2025
Method of manufacturing a semiconductor device having three-dimensional cell structure
SK HYNIX INC0 citations63
US12439585B2Oct 7, 2025
Semiconductor device and manufacturing method of semiconductor device
SK HYNIX INC0 citations63
US12382636B2Aug 5, 2025
Semiconductor device including selector layer
SK HYNIX INC0 citations63
US12063795B2Aug 13, 2024
Three-dimensional semiconductor device having variable resistance structure
SK HYNIX INC0 citations63
US11948633B2Apr 2, 2024
Resistive memory device and operating method of the resistive memory device
SK HYNIX INC0 citations63
US11871684B2Jan 9, 2024
Semiconductor device including resistance changing layer and method of manufacturing the same
SK HYNIX INC0 citations63
US11696520B2Jul 4, 2023
Semiconductor device having three-dimensional cell structure
SK HYNIX INC0 citations63
US11563172B2Jan 24, 2023
Variable resistance memory device and manufacturing method of the same
SK HYNIX INC0 citations63
US11527288B2Dec 13, 2022
Memory cell and operating method of memory cell
SK HYNIX INC0 citations63
US11437077B2Sep 6, 2022
Semiconductor device including common select line
SK HYNIX INC0 citations63
US11417707B2Aug 16, 2022
Nonvolatile memory device of three-dimensional structure including resistance change element
SK HYNIX INC1 citations63
US11410723B2Aug 9, 2022
Semiconductor device and method of operating the same
SK HYNIX INC0 citations63
US11393823B2Jul 19, 2022
Semiconductor device and manufacturing method of semiconductor device
SK HYNIX INC1 citations63
US11380844B2Jul 5, 2022
Semiconductor device including variable resistance element
SK HYNIX INC0 citations63
US12382846B2Aug 5, 2025
Ferroelectric components and cross point array devices including the ferroelectric components
SK HYNIX INC0 citations62
US12308311B2May 20, 2025
Semiconductor device including interconnection structure including MXene and method of manufacturing the same
SK HYNIX INC0 citations62
US12207572B2Jan 21, 2025
Electronic device including channel layer including variable resistance and method of manufacturing the same
SK HYNIX INC0 citations62
US12201040B2Jan 14, 2025
Electronic device including proton conductive layer and resistance change channel layer capable of receiving hydrogen
SK HYNIX INC0 citations62
US12108606B2Oct 1, 2024
Nonvolatile memory device having a ferroelectric layer
SK HYNIX INC0 citations62
US12082420B2Sep 3, 2024
Semiconductor device including interlayer insulation structure including metal-organic framework
SK HYNIX INC0 citations62
US11955529B2Apr 9, 2024
Semiconductor device with interlayer insulation structure including metal-organic framework layer and method of manufacturing the same
SK HYNIX INC0 citations62
US11943927B2Mar 26, 2024
Semiconductor memory device
SK HYNIX INC0 citations62
US11800719B2Oct 24, 2023
Nonvolatile memory device having a ferroelectric layer
SK HYNIX INC0 citations62
US11502248B2Nov 15, 2022
Ferroelectric components and cross point array devices including the ferroelectric components
SK HYNIX INC0 citations62
US11482667B2Oct 25, 2022
Nonvolatile memory device having a resistance change layer and a plurality of electrode pattern layers
SK HYNIX INC0 citations62
US11456318B2Sep 27, 2022
Nonvolatile memory device having a ferroelectric layer
SK HYNIX INC0 citations62
US11362107B2Jun 14, 2022
Nonvolatile memory device having a ferroelectric layer
SK HYNIX INC1 citations62
SAMSUNG SDI CO LTD
8 patentsUS10829671B2Nov 10, 2020
Adhesive film and display member comprising the same
SAMSUNG SDI CO LTD4 citations72
US10745597B2Aug 18, 2020
Adhesive composition, adhesive film prepared from the same and display member including the same
SAMSUNG SDI CO LTD5 citations72
US10669450B2Jun 2, 2020
Flexible display device
SAMSUNG SDI CO LTD2 citations72
US10476037B2Nov 12, 2019
Flexible display apparatus
SAMSUNG SDI CO LTD2 citations72
US10227513B2Mar 12, 2019
Adhesive composition, adhesive film prepared from the same and display member including the same
SAMSUNG SDI CO LTD2 citations72
US12297382B2May 13, 2025
Adhesive composition, adhesive film prepared from the same and display member including the same
SAMSUNG SDI CO LTD0 citations62
US11999879B2Jun 4, 2024
Adhesive film and display member comprising the same
SAMSUNG SDI CO LTD0 citations62
US11492516B2Nov 8, 2022
Adhesive film and display member including the same
SAMSUNG SDI CO LTD0 citations62
LG INNOTEK CO LTD
3 patentsJEONG HAE-DONG
1 patentKYUNGDONG NAVIEN CO LTD
1 patentSAMSUNG ELECTRONICS CO LTD
1 patentJANG JUNG CHEOL
1 patentMANDO CORP
1 patentKOREA ADVANCED INST SCI & TECH
1 patentKUMHO TIRE CO INC
1 patentShowing the top 50 of 91 patents by PatentIndex Score.