Inventor
LEE YUNSEONG
KR52 patents
Patents
50 patentsUS10714500B2Jul 14, 2020
Electronic device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD10 citations84
US11973142B2Apr 30, 2024
Integrated circuit including transistors and a method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US11862705B2Jan 2, 2024
Electronic devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US11711923B2Jul 25, 2023
Electronic device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US11677025B2Jun 13, 2023
Electronic device including ferroelectric layer
SAMSUNG ELECTRONICS CO LTD1 citations73
US11527646B2Dec 13, 2022
Domain switching devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD4 citations73
US11522082B2Dec 6, 2022
Electronic device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations73
US11417763B2Aug 16, 2022
Integrated circuit including transistors and a method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD3 citations73
US11349026B2May 31, 2022
Electronic device including ferroelectric layer
SAMSUNG ELECTRONICS CO LTD3 citations73
US11177283B2Nov 16, 2021
Electronic device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD3 citations73
US10937885B2Mar 2, 2021
Electronic device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US10702940B2Jul 7, 2020
Logic switching device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations73
US10808142B2Oct 20, 2020
Method of preparing graphene quantum dot, hardmask composition including the graphene quantum dot obtained by the method, method of forming patterns using the hardmask composition, and hardmask formed from the hardmask composition
SAMSUNG ELECTRONICS CO LTD2 citations72
US10551735B2Feb 4, 2020
Pellicle composition for photomask, pellicle for photomask formed from the pellicle composition, method of forming the pellicle, reticle including the pellicle, and exposure apparatus for lithography including the reticle
SAMSUNG ELECTRONICS CO LTD2 citations72
US12457792B2Oct 28, 2025
Thin film structure and electronic device including the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12382644B2Aug 5, 2025
Thin film structure including dielectric material layer and electronic device employing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12369361B2Jul 22, 2025
Integrated circuit including transistors and a method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12283629B2Apr 22, 2025
Ferroelectric thin-film structure and electronic device including the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12230711B2Feb 18, 2025
Electronic device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12224346B2Feb 11, 2025
Domain switching devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12206009B2Jan 21, 2025
Electronic devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12191311B2Jan 7, 2025
Semiconductor device including ferroelectric material, neuromorphic circuit including the semiconductor device, and neuromorphic computing apparatus including the neuromorphic circuit
SAMSUNG ELECTRONICS CO LTD0 citations62
US12176413B2Dec 24, 2024
Ferroelectric structure including a ferroelectric film having a first net polarization oriented toward a first polarization enhancement film and semiconductor device including the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12100749B2Sep 24, 2024
Ferroelectric thin-film structures, methods of manufacturing the same, and electronic devices including the ferroelectric thin-film structures
SAMSUNG ELECTRONICS CO LTD0 citations62
US12094971B2Sep 17, 2024
Electronic device including ferroelectric layer
SAMSUNG ELECTRONICS CO LTD0 citations62
US12089416B2Sep 10, 2024
Electronic device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12080595B2Sep 3, 2024
Method of forming interconnect structure
SAMSUNG ELECTRONICS CO LTD0 citations62
US12027589B2Jul 2, 2024
Semiconductor device including graphene and method of manufacturing the semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11908918B2Feb 20, 2024
Electronic device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11887989B2Jan 30, 2024
Semiconductor device including ferroelectric material, neuromorphic circuit including the semiconductor device, and neuromorphic computing apparatus including the neuromorphic circuit
SAMSUNG ELECTRONICS CO LTD0 citations62
US11824118B2Nov 21, 2023
Electronic device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11824119B2Nov 21, 2023
Domain switching devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11701728B2Jul 18, 2023
Logic switching device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11646375B2May 9, 2023
Ferroelectric thin-film structure and electronic device including the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11600712B2Mar 7, 2023
Ferroelectric structure including a ferroelectric film having a net polarization oriented to a polarization enhancement film and semiconductor device including the same
SAMSUNG ELECTRONICS CO LTD1 citations62
US11538918B2Dec 27, 2022
Electronic device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11527635B2Dec 13, 2022
Ferroelectric thin-film structures, methods of manufacturing the same, and electronic devices including the ferroelectric thin-film structures
SAMSUNG ELECTRONICS CO LTD1 citations62
US11456351B2Sep 27, 2022
Thin film structure including dielectric material layer and electronic device employing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11305365B2Apr 19, 2022
Logic switching device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US10777412B2Sep 15, 2020
Hardmask composition, method of preparing the same, and method of forming patterned layer by using the hardmask composition
SAMSUNG ELECTRONICS CO LTD1 citations62
US12484287B2Nov 25, 2025
Ferroelectric material, and electronic device including the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US12218217B2Feb 4, 2025
Layer structure including dielectric layer, methods of manufacturing the layer structure, and electronic device including the layer structure
SAMSUNG ELECTRONICS CO LTD0 citations61
US11843037B2Dec 12, 2023
Semiconductor device and method of manufacturing the semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations61
US12527004B2Jan 13, 2026
Nonvolatile memory device and apparatus comprising the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US12527038B2Jan 13, 2026
Electronic device including ferroelectric thin film structure
SAMSUNG ELECTRONICS CO LTD0 citations51
US12205951B2Jan 21, 2025
Complementary metal oxide semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations51
US11978798B2May 7, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations51
US11034847B2Jun 15, 2021
Hardmask composition, method of forming pattern using hardmask composition, and hardmask formed from hardmask composition
SAMSUNG ELECTRONICS CO LTD0 citations51
US9929238B2Mar 27, 2018
Graphene-containing device having graphene nanopatterns separated by narrow dead zone distance
SAMSUNG ELECTRONICS CO LTD1 citations51
US9748108B2Aug 29, 2017
Method of forming graphene nanopattern by using mask formed from block copolymer
SAMSUNG ELECTRONICS CO LTD1 citations51
Showing the top 50 of 52 patents by PatentIndex Score.