Inventor
SU CHIHYU
CN26 patents
⚠️ This page may combine multiple inventors who share the name “SU CHIHYU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SHENZHEN CHINA STAR OPTOELECT
25 patentsUS9786695B2Oct 10, 2017
TFT substrate structure
SHENZHEN CHINA STAR OPTOELECT4 citations84
US9589995B2Mar 7, 2017
TFT substrate having three parallel capacitors
SHENZHEN CHINA STAR OPTOELECT9 citations83
US10373989B2Aug 6, 2019
Thin-film transistor array substrate and manufacturing method thereof
SHENZHEN CHINA STAR OPTOELECT2 citations73
US9876037B2Jan 23, 2018
Thin-film transistor array substrate and manufacturing method thereof
SHENZHEN CHINA STAR OPTOELECT2 citations73
US9768202B2Sep 19, 2017
TFT backplate structure comprising transistors having gate isolation layers of different thicknesses and manufacture method thereof
SHENZHEN CHINA STAR OPTOELECT3 citations73
US9799677B2Oct 24, 2017
Structure of dual gate oxide semiconductor TFT substrate
SHENZHEN CHINA STAR OPTOELECT3 citations72
US9768323B2Sep 19, 2017
Manufacture method of dual gate oxide semiconductor TFT substrate and structure thereof
SHENZHEN CHINA STAR OPTOELECT4 citations72
US9748285B2Aug 29, 2017
Manufacture method of dual gate oxide semiconductor TFT substrate and structure thereof
SHENZHEN CHINA STAR OPTOELECT2 citations72
US9634032B2Apr 25, 2017
Manufacture method of dual gate oxide semiconductor TFT substrate and structure thereof
SHENZHEN CHINA STAR OPTOELECT3 citations72
US9543442B2Jan 10, 2017
Manufacture method of dual gate oxide semiconductor TFT substrate and structure thereof
SHENZHEN CHINA STAR OPTOELECT2 citations72
US9698172B2Jul 4, 2017
TFT substrate structure
SHENZHEN CHINA STAR OPTOELECT1 citations62
US9786691B2Oct 10, 2017
TFT substrate structure
SHENZHEN CHINA STAR OPTOELECT0 citations52
US9768200B2Sep 19, 2017
TFT backplate structure and manufacture method thereof
SHENZHEN CHINA STAR OPTOELECT1 citations52
US9728560B2Aug 8, 2017
TFT substrate structure
SHENZHEN CHINA STAR OPTOELECT0 citations52
US9704887B2Jul 11, 2017
TFT substrate structure
SHENZHEN CHINA STAR OPTOELECT0 citations52
US10629745B2Apr 21, 2020
Manufacturing method and structure of oxide thin film transistor
SHENZHEN CHINA STAR OPTOELECT0 citations51
US9947699B2Apr 17, 2018
Manufacturing method of dual gate oxide semiconductor TFT substrate and substrate thereof
SHENZHEN CHINA STAR OPTOELECT0 citations51
US9922995B2Mar 20, 2018
Structure of dual gate oxide semiconductor TFT substrate including TFT having top and bottom gates
SHENZHEN CHINA STAR OPTOELECT1 citations51
US9773851B2Sep 26, 2017
OLED display device comprising an insulative layer of varying thickness and manufacturing method thereof
SHENZHEN CHINA STAR OPTOELECT1 citations51
US9570620B2Feb 14, 2017
Manufacture method of dual gate oxide semiconductor TFT substrate and structure thereof
SHENZHEN CHINA STAR OPTOELECT1 citations51
US9960195B2May 1, 2018
Method for manufacturing TFT backplane and structure of TFT backplane
SHENZHEN CHINA STAR OPTOELECT0 citations42
US10109659B2Oct 23, 2018
TFT backplate structure comprising transistors having gate isolation layers of different thicknesses and manufacture method thereof
SHENZHEN CHINA STAR OPTOELECT0 citations41
US10043829B2Aug 7, 2018
TFT backplate structure and manufacture method thereof
SHENZHEN CHINA STAR OPTOELECT0 citations41
US9601523B2Mar 21, 2017
Dual gate TFT substrate structure utilizing COA skill
SHENZHEN CHINA STAR OPTOELECT0 citations41
US9741858B2Aug 22, 2017
Amorphous silicon semiconductor TFT backboard structure
SHENZHEN CHINA STAR OPTOELECT0 citations38