Inventor
PENG WEN-PIN
US11 patents
Patents
11 patentsUS9396995B1Jul 19, 2016
MOL contact metallization scheme for improved yield and device reliability
GLOBALFOUNDRIES INC15 citations83
US9385124B1Jul 5, 2016
Methods of forming reduced thickness spacers in CMOS based integrated circuit products
GLOBALFOUNDRIES INC19 citations83
US9711619B1Jul 18, 2017
Stress memorization and defect suppression techniques for NMOS transistor devices
GLOBALFOUNDRIES INC5 citations72
US9607989B2Mar 28, 2017
Forming self-aligned NiSi placement with improved performance and yield
GLOBALFOUNDRIES INC2 citations72
US9385030B2Jul 5, 2016
Spacer to prevent source-drain contact encroachment
GLOBALFOUNDRIES INC4 citations71
US9905673B2Feb 27, 2018
Stress memorization and defect suppression techniques for NMOS transistor devices
GLOBALFOUNDRIES INC1 citations51
US9704759B2Jul 11, 2017
Methods of forming CMOS based integrated circuit products using disposable spacers
GLOBALFOUNDRIES INC1 citations51
US9184288B2Nov 10, 2015
Semiconductor structures with bridging films and methods of fabrication
GLOBALFOUNDRIES INC0 citations50
US9123783B2Sep 1, 2015
Integrated circuits and methods of forming integrated circuits with interlayer dielectric protection
GLOBALFOUNDRIES INC1 citations49
US10854472B2Dec 1, 2020
Method for forming a metal gate including de-oxidation of an oxidized surface of the metal gate utilizing a reducing agent
GLOBALFOUNDRIES INC0 citations48
US10290634B2May 14, 2019
Multiple threshold voltages using fin pitch and profile
GLOBALFOUNDRIES INC0 citations41