Inventor
LIN YA-HSIU
TW6 patents
Patents
6 patentsUS10741450B2Aug 11, 2020
Semiconductor device having a metal gate and formation method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12557372B2Feb 17, 2026
Semiconductor device having cut gate dielectric
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11901237B2Feb 13, 2024
Semiconductor device having cut gate dielectric
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11437278B2Sep 6, 2022
Method for forming semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10868003B2Dec 15, 2020
Creating devices with multiple threshold voltages by cut-metal-gate process
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US10461078B2Oct 29, 2019
Creating devices with multiple threshold voltage by cut-metal-gate process
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61