Inventor

LIN HAN-TING

TW26 patents

⚠️ This page may combine multiple inventors who share the name “LIN HAN-TING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LIN HAN-TING

TAIWAN SEMICONDUCTOR MFG CO LTD

Metal etching stop layer in magnetic tunnel junction memory cells

Semiconductor structure and manufacturing method of the same

Memory device and fabrication method thereof

Gradient protection layer in MTJ manufacturing

Semiconductor structure and manufacturing method of the same

Gradient protection layer in MTJ manufacturing

Gradient protection layer in MTJ manufacturing

Magnetic of forming magnetic tunnel junction device using protective mask

Method for manufacturing a memory device using multiple etching processes

Integrated circuit

Method of fabricating magneto-resistive random access memory (MRAM)

Semiconductor structure and method for forming the same

Method of fabricating magneto-resistive random access memory (MRAM)

Magnetic tunnel junction device

Semiconductor structure and manufacturing method of the same

Gradient protection layer in MTJ manufacturing

Method of fabricating magneto-resistive random access memory (MRAM)

Integrated circuit

Semiconductor structure and method for forming the same

Metal etching stop layer in magnetic tunnel junction memory cells

Integrated circuit

Integrated circuit and fabrication method thereof

Memory device structure and method for forming the same

Memory device and method for forming thereof

NATIONAL YANG MING CHIAO TUNG UNIV

Fixture for heat pressing process of manufacturing airbag

Modular pneumatic somatosensory device