Inventor
CHANG AN-SHEN
TW20 patents
⚠️ This page may combine multiple inventors who share the name “CHANG AN-SHEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
16 patentsUS9825173B2Nov 21, 2017
FinFET device
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations92
US10658509B2May 19, 2020
FinFET device
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9704974B2Jul 11, 2017
Process of manufacturing Fin-FET device
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations84
US11387406B2Jul 12, 2022
Magnetic of forming magnetic tunnel junction device using protective mask
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12471310B2Nov 11, 2025
Method of making a FinFET device including a step of removing a portion of a fin
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12274181B2Apr 8, 2025
Magnetic tunnel junction device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12268097B2Apr 1, 2025
Top-interconnection metal lines for a memory array device and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11968908B2Apr 23, 2024
Magnetic tunnel junction device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11908939B2Feb 20, 2024
Method of making a FinFET device including a step of recessing a subset of the fins
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11856869B2Dec 26, 2023
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11723284B2Aug 8, 2023
Top-interconnection metal lines for a memory array device and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11665977B2May 30, 2023
Magnetic tunnel junction device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11417832B2Aug 16, 2022
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11094825B2Aug 17, 2021
FinFET device with fins of non-uniform width
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11545619B2Jan 3, 2023
Memory device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations58
US11985906B2May 14, 2024
Low-resistance contact to top electrodes for memory cells and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52