P

Inventor

CHANG AN-SHEN

TW20 patents
⚠️ This page may combine multiple inventors who share the name “CHANG AN-SHEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

16 patents
US9825173B2Nov 21, 2017

FinFET device

TAIWAN SEMICONDUCTOR MFG CO LTD11 citations92
US10658509B2May 19, 2020

FinFET device

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9704974B2Jul 11, 2017

Process of manufacturing Fin-FET device

TAIWAN SEMICONDUCTOR MFG CO LTD11 citations84
US11387406B2Jul 12, 2022

Magnetic of forming magnetic tunnel junction device using protective mask

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12471310B2Nov 11, 2025

Method of making a FinFET device including a step of removing a portion of a fin

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12274181B2Apr 8, 2025

Magnetic tunnel junction device and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12268097B2Apr 1, 2025

Top-interconnection metal lines for a memory array device and methods for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11968908B2Apr 23, 2024

Magnetic tunnel junction device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11908939B2Feb 20, 2024

Method of making a FinFET device including a step of recessing a subset of the fins

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11856869B2Dec 26, 2023

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11723284B2Aug 8, 2023

Top-interconnection metal lines for a memory array device and methods for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11665977B2May 30, 2023

Magnetic tunnel junction device and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11417832B2Aug 16, 2022

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11094825B2Aug 17, 2021

FinFET device with fins of non-uniform width

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11545619B2Jan 3, 2023

Memory device structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations58
US11985906B2May 14, 2024

Low-resistance contact to top electrodes for memory cells and methods for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52

CHENG CHUN-FAI

2 patents

TAIWAN SEMICONDUCTOR MFG

1 patent

TSENG CHIH-HUNG

1 patent