Inventor
WU HAW-YUN
TW9 patents
Patents
9 patentsUS11139290B2Oct 5, 2021
High voltage cascode HEMT device
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US11195945B2Dec 7, 2021
Cap structure coupled to source to reduce saturation current in HEMT device
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US12532733B2Jan 20, 2026
Device layout design for improving device performance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12363938B2Jul 15, 2025
Cap structure coupled to source to reduce saturation current in HEMT device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12100757B2Sep 24, 2024
Cap structure coupled to source to reduce saturation current in HEMT device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12046554B2Jul 23, 2024
Device layout design for improving device performance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11742419B2Aug 29, 2023
Cap structure coupled to source to reduce saturation current in HEMT device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12267006B2Apr 1, 2025
Forming integrated electronic devices for converting and downscaling alternating current
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations57
US12451419B2Oct 21, 2025
Wafer-on-wafer cascode HEMT device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50