P

Inventor

SU LIANG-YU

TW15 patents
⚠️ This page may combine multiple inventors who share the name “SU LIANG-YU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

14 patents
US11973076B2Apr 30, 2024

Electrostatic discharge protection circuit and semiconductor circuit

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US11195945B2Dec 7, 2021

Cap structure coupled to source to reduce saturation current in HEMT device

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US10978445B2Apr 13, 2021

Electrostatic discharge protection circuit and semiconductor circuit

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12464738B2Nov 4, 2025

Integrated chip including a device with a reduced surface field region

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11978810B2May 7, 2024

Method for forming an IC including a varactor with reduced surface field region

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11018266B2May 25, 2021

Reduced surface field layer in varactor

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12363938B2Jul 15, 2025

Cap structure coupled to source to reduce saturation current in HEMT device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12317530B2May 27, 2025

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12100757B2Sep 24, 2024

Cap structure coupled to source to reduce saturation current in HEMT device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11764288B2Sep 19, 2023

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11742419B2Aug 29, 2023

Cap structure coupled to source to reduce saturation current in HEMT device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11380779B2Jul 5, 2022

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US12446325B2Oct 14, 2025

Electrostatic discharge protection circuit and semiconductor circuit

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11437466B2Sep 6, 2022

Avalanche-protected transistors using a bottom breakdown current path and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations45

UNIV NAT TAIWAN

1 patent