Inventor
RAWAT HARSH
IN27 patents
⚠️ This page may combine multiple inventors who share the name “RAWAT HARSH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ST MICROELECTRONICS INT NV
25 patentsUS9311990B1Apr 12, 2016
Pseudo dual port memory using a dual port cell and a single port cell with associated valid data bits and related methods
ST MICROELECTRONICS INT NV9 citations83
US11984151B2May 14, 2024
Adaptive bit line overdrive control for an in-memory compute operation where simultaneous access is made to plural rows of a static random access memory (SRAM)
ST MICROELECTRONICS INT NV3 citations74
US12087356B2Sep 10, 2024
Serial word line actuation with linked source voltage supply modulation for an in-memory compute operation where simultaneous access is made to plural rows of a static random access memory (SRAM)
ST MICROELECTRONICS INT NV2 citations72
US12040013B2Jul 16, 2024
Static random access memory supporting a single clock cycle read-modify-write operation
ST MICROELECTRONICS INT NV2 citations71
US10249363B2Apr 2, 2019
Configurable pseudo dual port architecture for use with single port SRAM
ST MICROELECTRONICS INT NV2 citations71
US10032506B2Jul 24, 2018
Configurable pseudo dual port architecture for use with single port SRAM
ST MICROELECTRONICS INT NV2 citations71
US9786364B1Oct 10, 2017
Low voltage selftime tracking circuitry for write assist based memory operation
ST MICROELECTRONICS INT NV3 citations71
US12406705B2Sep 2, 2025
In-memory computation circuit using static random access memory (SRAM) array segmentation
ST MICROELECTRONICS INT NV0 citations62
US12183424B2Dec 31, 2024
Bit-cell architecture based in-memory compute
ST MICROELECTRONICS INT NV0 citations62
US12159689B2Dec 3, 2024
SRAM with fast, controlled peak current, power efficient array reset, and data corruption modes for secure applications
ST MICROELECTRONICS INT NV0 citations61
US12482518B2Nov 25, 2025
Enhanced accuracy of bit line reading for an in-memory compute operation by accounting for variation in read current
ST MICROELECTRONICS INT NV0 citations51
US12469545B2Nov 11, 2025
Bit line read current mirroring circuit for an in-memory compute operation where simultaneous access is made to plural rows of a static random access memory (SRAM)
ST MICROELECTRONICS INT NV0 citations51
US12361982B2Jul 15, 2025
Memory architecture supporting both conventional memory access mode and digital in-memory computation processing mode
ST MICROELECTRONICS INT NV0 citations51
US12354644B2Jul 8, 2025
Adaptive word line underdrive control for an in-memory compute operation where simultaneous access is made to plural rows of a static random access memory (SRAM)
ST MICROELECTRONICS INT NV0 citations51
US12237007B2Feb 25, 2025
Selective bit line clamping control for an in-memory compute operation where simultaneous access is made to plural rows of a static random access memory (SRAM)
ST MICROELECTRONICS INT NV0 citations51
US12176025B2Dec 24, 2024
Adaptive body bias management for an in-memory compute operation where simultaneous access is made to plural rows of a static random access memory (SRAM)
ST MICROELECTRONICS INT NV0 citations51
US12584961B2Mar 24, 2026
Built-in self test circuit for segmented static random access memory (SRAM) array input/output
ST MICROELECTRONICS INT NV0 citations50
US12437825B2Oct 7, 2025
At-speed transition fault testing for a multi-port and multi-clock memory
ST MICROELECTRONICS INT NV0 citations50
US12353341B2Jul 8, 2025
Tuning of read/write cycle time delay for a memory circuit dependent on operational mode selection
ST MICROELECTRONICS INT NV0 citations50
US12340099B2Jun 24, 2025
Static random access memory supporting a single clock cycle read-modify-write operation with a modulated word line assertion
ST MICROELECTRONICS INT NV0 citations50
US12170120B2Dec 17, 2024
Built-in self test circuit for segmented static random access memory (SRAM) array input/output
ST MICROELECTRONICS INT NV0 citations50
US12068026B2Aug 20, 2024
Low power and fast memory reset
ST MICROELECTRONICS INT NV0 citations50
US12046324B2Jul 23, 2024
Modular memory architecture with gated sub-array operation dependent on stored data content
ST MICROELECTRONICS INT NV0 citations49
US9208040B2Dec 8, 2015
Repair control logic for safe memories having redundant elements
ST MICROELECTRONICS INT NV0 citations49
US9524242B2Dec 20, 2016
Cache memory system with simultaneous read-write in single cycle
ST MICROELECTRONICS INT NV0 citations40