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Inventor

AYODHYAWASI MANUJ

IN19 patents
⚠️ This page may combine multiple inventors who share the name “AYODHYAWASI MANUJ”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ST MICROELECTRONICS INT NV

14 patents
US11984151B2May 14, 2024

Adaptive bit line overdrive control for an in-memory compute operation where simultaneous access is made to plural rows of a static random access memory (SRAM)

ST MICROELECTRONICS INT NV3 citations74
US12087356B2Sep 10, 2024

Serial word line actuation with linked source voltage supply modulation for an in-memory compute operation where simultaneous access is made to plural rows of a static random access memory (SRAM)

ST MICROELECTRONICS INT NV2 citations72
US12406705B2Sep 2, 2025

In-memory computation circuit using static random access memory (SRAM) array segmentation

ST MICROELECTRONICS INT NV0 citations62
US12183424B2Dec 31, 2024

Bit-cell architecture based in-memory compute

ST MICROELECTRONICS INT NV0 citations62
US12482518B2Nov 25, 2025

Enhanced accuracy of bit line reading for an in-memory compute operation by accounting for variation in read current

ST MICROELECTRONICS INT NV0 citations51
US12469545B2Nov 11, 2025

Bit line read current mirroring circuit for an in-memory compute operation where simultaneous access is made to plural rows of a static random access memory (SRAM)

ST MICROELECTRONICS INT NV0 citations51
US12361982B2Jul 15, 2025

Memory architecture supporting both conventional memory access mode and digital in-memory computation processing mode

ST MICROELECTRONICS INT NV0 citations51
US12354644B2Jul 8, 2025

Adaptive word line underdrive control for an in-memory compute operation where simultaneous access is made to plural rows of a static random access memory (SRAM)

ST MICROELECTRONICS INT NV0 citations51
US12237007B2Feb 25, 2025

Selective bit line clamping control for an in-memory compute operation where simultaneous access is made to plural rows of a static random access memory (SRAM)

ST MICROELECTRONICS INT NV0 citations51
US12176025B2Dec 24, 2024

Adaptive body bias management for an in-memory compute operation where simultaneous access is made to plural rows of a static random access memory (SRAM)

ST MICROELECTRONICS INT NV0 citations51
US12584961B2Mar 24, 2026

Built-in self test circuit for segmented static random access memory (SRAM) array input/output

ST MICROELECTRONICS INT NV0 citations50
US12437825B2Oct 7, 2025

At-speed transition fault testing for a multi-port and multi-clock memory

ST MICROELECTRONICS INT NV0 citations50
US12353341B2Jul 8, 2025

Tuning of read/write cycle time delay for a memory circuit dependent on operational mode selection

ST MICROELECTRONICS INT NV0 citations50
US12170120B2Dec 17, 2024

Built-in self test circuit for segmented static random access memory (SRAM) array input/output

ST MICROELECTRONICS INT NV0 citations50

ST MICROELECTRONICS SRL

4 patents

AYODHYAWASI MANUJ

1 patent