Inventor
AYODHYAWASI MANUJ
IN19 patents
⚠️ This page may combine multiple inventors who share the name “AYODHYAWASI MANUJ”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ST MICROELECTRONICS INT NV
14 patentsUS11984151B2May 14, 2024
Adaptive bit line overdrive control for an in-memory compute operation where simultaneous access is made to plural rows of a static random access memory (SRAM)
ST MICROELECTRONICS INT NV3 citations74
US12087356B2Sep 10, 2024
Serial word line actuation with linked source voltage supply modulation for an in-memory compute operation where simultaneous access is made to plural rows of a static random access memory (SRAM)
ST MICROELECTRONICS INT NV2 citations72
US12406705B2Sep 2, 2025
In-memory computation circuit using static random access memory (SRAM) array segmentation
ST MICROELECTRONICS INT NV0 citations62
US12183424B2Dec 31, 2024
Bit-cell architecture based in-memory compute
ST MICROELECTRONICS INT NV0 citations62
US12482518B2Nov 25, 2025
Enhanced accuracy of bit line reading for an in-memory compute operation by accounting for variation in read current
ST MICROELECTRONICS INT NV0 citations51
US12469545B2Nov 11, 2025
Bit line read current mirroring circuit for an in-memory compute operation where simultaneous access is made to plural rows of a static random access memory (SRAM)
ST MICROELECTRONICS INT NV0 citations51
US12361982B2Jul 15, 2025
Memory architecture supporting both conventional memory access mode and digital in-memory computation processing mode
ST MICROELECTRONICS INT NV0 citations51
US12354644B2Jul 8, 2025
Adaptive word line underdrive control for an in-memory compute operation where simultaneous access is made to plural rows of a static random access memory (SRAM)
ST MICROELECTRONICS INT NV0 citations51
US12237007B2Feb 25, 2025
Selective bit line clamping control for an in-memory compute operation where simultaneous access is made to plural rows of a static random access memory (SRAM)
ST MICROELECTRONICS INT NV0 citations51
US12176025B2Dec 24, 2024
Adaptive body bias management for an in-memory compute operation where simultaneous access is made to plural rows of a static random access memory (SRAM)
ST MICROELECTRONICS INT NV0 citations51
US12584961B2Mar 24, 2026
Built-in self test circuit for segmented static random access memory (SRAM) array input/output
ST MICROELECTRONICS INT NV0 citations50
US12437825B2Oct 7, 2025
At-speed transition fault testing for a multi-port and multi-clock memory
ST MICROELECTRONICS INT NV0 citations50
US12353341B2Jul 8, 2025
Tuning of read/write cycle time delay for a memory circuit dependent on operational mode selection
ST MICROELECTRONICS INT NV0 citations50
US12170120B2Dec 17, 2024
Built-in self test circuit for segmented static random access memory (SRAM) array input/output
ST MICROELECTRONICS INT NV0 citations50
ST MICROELECTRONICS SRL
4 patentsUS12386506B2Aug 12, 2025
Tagged memory operated at lower VMIN in error tolerant system
ST MICROELECTRONICS SRL0 citations62
US11900240B2Feb 13, 2024
Variable clock adaptation in neural network processors
ST MICROELECTRONICS SRL1 citations62
US11836346B2Dec 5, 2023
Tagged memory operated at lower vmin in error tolerant system
ST MICROELECTRONICS SRL0 citations62
US11360667B2Jun 14, 2022
Tagged memory operated at lower vmin in error tolerant system
ST MICROELECTRONICS SRL0 citations62