P

Inventor

TSAI NAN-HSIUNG

US11 patents
⚠️ This page may combine multiple inventors who share the name “TSAI NAN-HSIUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MOSEL VITELIC INC

4 patents
US5679595AOct 21, 1997

Self-registered capacitor bottom plate-local interconnect scheme for DRAM

MOSEL VITELIC INC37 citations92
US5792686AAug 11, 1998

Method of forming a bit-line and a capacitor structure in an integrated circuit

MOSEL VITELIC INC15 citations73
US6271556B1Aug 7, 2001

High density memory structure

MOSEL VITELIC INC3 citations62
US5880496AMar 9, 1999

Semiconductor having self-aligned polysilicon electrode layer

MOSEL VITELIC INC4 citations62

MOS ELECTRONICS CORP

3 patents
US4910168AMar 20, 1990

Method to reduce silicon area for via formation

MOS ELECTRONICS CORP46 citations91
US5084420AJan 28, 1992

Resistor with side wall contact

MOS ELECTRONICS CORP9 citations72
US4992773AFeb 12, 1991

Resistor with side wall contact

MOS ELECTRONICS CORP0 citations50

GRACE SEMICONDUCTOR MFG CORP

2 patents
US7371664B2May 13, 2008

Process for wafer thinning

GRACE SEMICONDUCTOR MFG CORP1 citations51
US7282417B1Oct 16, 2007

Ion doping method to form source and drain

GRACE SEMICONDUCTOR MFG CORP0 citations51

INTEL CORP

1 patent
US4446613AMay 8, 1984

Integrated circuit resistor and method of fabrication

INTEL CORP24 citations81

MOS ELECTRONICS

1 patent
US5019534AMay 28, 1991

Process of making self-aligned contact using differential oxidation

MOS ELECTRONICS7 citations63