Inventor

SHIMAKURA HARUHITO

JP6 patents

⚠️ This page may combine multiple inventors who share the name “SHIMAKURA HARUHITO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NIPPON MINING CO

5 patents

US5137847AAug 11, 1992

Method of producing GaAs single crystal substrate using three stage annealing and interstage etching

NIPPON MINING CO22 citations87

US5214003AMay 25, 1993

Process for producing a uniform oxide layer on a compound semiconductor substrate

NIPPON MINING CO8 citations71

US4929564AMay 29, 1990

Method for producing compound semiconductor single crystals and method for producing compound semiconductor devices

NIPPON MINING CO8 citations71

US5173127ADec 22, 1992

Semi-insulating inp single crystals, semiconductor devices having substrates of the crystals and processes for producing the same

NIPPON MINING CO5 citations60

US5254507AOct 19, 1993

Semi-insulating InP single crystals, semiconductor devices having substrates of the crystals and processes for producing the same

NIPPON MINING CO1 citations50

SHIMAKURA HARUHITO

1 patent

US5219632AJun 15, 1993

Compound semiconductor single crystals and the method for making the crystals, and semiconductor devices employing the crystals

SHIMAKURA HARUHITO31 citations86