Inventor

DEV PRAKASH C

US2 patents

⚠️ This page may combine multiple inventors who share the name “DEV PRAKASH C”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

1 patent

US6960523B2Nov 1, 2005

Method of reducing erosion of a nitride gate cap layer during reactive ion etch of nitride liner layer for bit line contact of DRAM device

IBM10 citations71

INFINEON TECHNOLOGIES CORP

1 patent

US6620699B2Sep 16, 2003

Method for forming inside nitride spacer for deep trench device DRAM cell

INFINEON TECHNOLOGIES CORP5 citations57