Inventor

CHUNG HOI-SUNG

KR39 patents

⚠️ This page may combine multiple inventors who share the name “CHUNG HOI-SUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHUNG HOI-SUNG

SAMSUNG ELECTRONICS CO LTD

Semiconductor devices with layers commonly contacting fins and methods of manufacturing the same

Semiconductor devices including a stressor in a recess and methods of forming the same

Semiconductor devices including an epitaxial layer with a slanted surface

Semiconductor device having embedded strain-inducing pattern and method of forming the same

Semiconductor device having embedded strain-inducing pattern and method of forming the same

Semiconductor device having embedded strain-inducing pattern and method of forming the same

Semiconductor devices including a stressor in a recess and methods of forming the same

Semiconductor devices incorporating semiconductor layer configurations and methods of manufacturing the same

Semiconductor devices with layers commonly contacting fins and methods of manufacturing the same

Semiconductor devices and methods of fabricating the same

Semiconductor devices including a stressor in a recess and methods of forming the same

Semiconductor devices and methods of fabricating the same

Semiconductor device including transistor and method of manufacturing the same

Semiconductor device including transistor and method of manufacturing the same

Methods of fabricating semiconductor device

Semiconductor device having embedded strain-inducing pattern and method of forming the same

Method of fabricating semiconductor device

Variable resistance memory device

Semiconductor devices including multilayer source/drain stressors and methods of manufacturing the same

SHIN DONG-SUK

Semiconductor devices including a stressor in a recess and methods of forming the same

Methods of forming semiconductor devices including a stressor in a recess

Semiconductor devices including a stressor in a recess and methods of forming the same

Semiconductor devices including a stressor in a recess and methods of forming the same

Semiconductor devices including a stressor in a recess and methods of forming the same

Semiconductor devices including a stressor in a recess and methods of forming the same

Methods of evaluating epitaxial growth and methods of forming an epitaxial layer

KIM DONG HYUK

Semiconductor devices and methods of fabricating the same

Semiconductor devices and methods of fabricating the same

Semiconductor devices and methods of fabricating the same

Methods for fabricating semiconductor devices

CHUNG HOI-SUNG

Semiconductor device including transistors having embedded source/drain regions each including upper and lower main layers comprising germanium

Methods of manufacturing semiconductor devices including forming (111) facets in silicon capping layers on source/drain regions

Transistors and methods of manufacturing the same

SHIN DONGSUK

Semiconductor devices having field effect transistors with epitaxial patterns in recessed regions

INTEL CORP

Metal oxide liner for cross-point phase change memory cell

APPLIED MATERIALS INC

Growth of thin oxide layer with silicon nitride and conversion

KIM MYUNG-SUN

Methods of forming semiconductor devices having faceted semiconductor patterns

DO JIN-HO

Method of fabricating semiconductor device

LIM HAJIN

Semiconductor devices including MOS transistors having an optimized channel region and methods of fabricating the same