P

Inventor

PAN KUO-HUA

TW104 patents
⚠️ This page may combine multiple inventors who share the name “PAN KUO-HUA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

44 patents
US10074558B1Sep 11, 2018

FinFET structure with controlled air gaps

TAIWAN SEMICONDUCTOR MFG CO LTD18 citations94
US9882023B2Jan 30, 2018

Sidewall spacers for self-aligned contacts

TAIWAN SEMICONDUCTOR MFG CO LTD16 citations91
US11302692B2Apr 12, 2022

Semiconductor devices having gate dielectric layers of varying thicknesses and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations86
US11101359B2Aug 24, 2021

Gate-all-around (GAA) method and devices

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10872980B2Dec 22, 2020

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10553481B2Feb 4, 2020

Vias for cobalt-based interconnects and methods of fabrication thereof

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10516030B2Dec 24, 2019

Contact plugs and methods forming same

TAIWAN SEMICONDUCTOR MFG CO LTD10 citations81
US11996320B2May 28, 2024

Reducing parasitic capacitance in field-effect transistors

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11923413B2Mar 5, 2024

Semiconductor structure with extended contact structure

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11923194B2Mar 5, 2024

Epitaxial blocking layer for multi-gate devices and fabrication methods thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11908735B2Feb 20, 2024

Vias for cobalt-based interconnects and methods of fabrication thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11742349B2Aug 29, 2023

Semiconductor devices having gate dielectric layers of varying thicknesses and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11721763B2Aug 8, 2023

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11545573B2Jan 3, 2023

Hybrid nanostructure and fin structure device

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11515199B2Nov 29, 2022

Semiconductor structures including standard cells and tap cells

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11362096B2Jun 14, 2022

Semiconductor device structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11315785B2Apr 26, 2022

Epitaxial blocking layer for multi-gate devices and fabrication methods thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11282705B2Mar 22, 2022

Semiconductor device and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11245005B2Feb 8, 2022

Method for manufacturing semiconductor structure with extended contact structure

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11152488B2Oct 19, 2021

Gate-all-around structure with dummy pattern top in channel region and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10854506B2Dec 1, 2020

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10741558B2Aug 11, 2020

Nanosheet CMOS device and method of forming

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US10403737B2Sep 3, 2019

Method of forming a gate structure of a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10134873B2Nov 20, 2018

Semiconductor device gate structure and method of fabricating thereof

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US12087844B2Sep 10, 2024

Semiconductor device structure with uniform threshold voltage distribution and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US11037831B2Jun 15, 2021

Gate structure and method

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US10930752B2Feb 23, 2021

Contact plugs and methods forming same

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations70
US12464763B2Nov 4, 2025

Hybrid nanostructure and fin structure device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12412777B2Sep 9, 2025

Reducing parasitic capacitance in field-effect transistors

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12414354B2Sep 9, 2025

Semiconductor strutures with dielectric fins

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12266653B2Apr 1, 2025

Semiconductor structure and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12183735B2Dec 31, 2024

Semiconductor devices and methods of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12080607B2Sep 3, 2024

Structure and method for FinFET device with source/drain modulation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12074057B2Aug 27, 2024

Isolation structures

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12051695B2Jul 30, 2024

Semiconductor devices having gate dielectric layers of varying thicknesses and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11967532B2Apr 23, 2024

Gate spacers and methods of forming the same in semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11804485B2Oct 31, 2023

Semiconductor devices and methods of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11749677B2Sep 5, 2023

Semiconductor structure and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11688791B2Jun 27, 2023

Gate structure and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11658074B2May 23, 2023

Structure and method for FinFET device with source/drain modulation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11532502B2Dec 20, 2022

Reducing parasitic capacitance in field-effect transistors

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11239339B2Feb 1, 2022

Gate structure and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US10714342B2Jul 14, 2020

Semiconductor device and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US12588498B2Mar 24, 2026

FinFET structure with controlled air gaps

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

TAIWAN SEMICONDUCTOR MFG

6 patents

Showing the top 50 of 104 patents by PatentIndex Score.