Inventor
PAN KUO-HUA
TW104 patents
⚠️ This page may combine multiple inventors who share the name “PAN KUO-HUA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
44 patentsUS10074558B1Sep 11, 2018
FinFET structure with controlled air gaps
TAIWAN SEMICONDUCTOR MFG CO LTD18 citations94
US9882023B2Jan 30, 2018
Sidewall spacers for self-aligned contacts
TAIWAN SEMICONDUCTOR MFG CO LTD16 citations91
US11302692B2Apr 12, 2022
Semiconductor devices having gate dielectric layers of varying thicknesses and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations86
US11101359B2Aug 24, 2021
Gate-all-around (GAA) method and devices
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10872980B2Dec 22, 2020
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10553481B2Feb 4, 2020
Vias for cobalt-based interconnects and methods of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10516030B2Dec 24, 2019
Contact plugs and methods forming same
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations81
US11996320B2May 28, 2024
Reducing parasitic capacitance in field-effect transistors
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11923413B2Mar 5, 2024
Semiconductor structure with extended contact structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11923194B2Mar 5, 2024
Epitaxial blocking layer for multi-gate devices and fabrication methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11908735B2Feb 20, 2024
Vias for cobalt-based interconnects and methods of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11742349B2Aug 29, 2023
Semiconductor devices having gate dielectric layers of varying thicknesses and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11721763B2Aug 8, 2023
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11545573B2Jan 3, 2023
Hybrid nanostructure and fin structure device
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11515199B2Nov 29, 2022
Semiconductor structures including standard cells and tap cells
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11362096B2Jun 14, 2022
Semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11315785B2Apr 26, 2022
Epitaxial blocking layer for multi-gate devices and fabrication methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11282705B2Mar 22, 2022
Semiconductor device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11245005B2Feb 8, 2022
Method for manufacturing semiconductor structure with extended contact structure
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11152488B2Oct 19, 2021
Gate-all-around structure with dummy pattern top in channel region and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10854506B2Dec 1, 2020
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10741558B2Aug 11, 2020
Nanosheet CMOS device and method of forming
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US10403737B2Sep 3, 2019
Method of forming a gate structure of a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10134873B2Nov 20, 2018
Semiconductor device gate structure and method of fabricating thereof
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US12087844B2Sep 10, 2024
Semiconductor device structure with uniform threshold voltage distribution and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US11037831B2Jun 15, 2021
Gate structure and method
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US10930752B2Feb 23, 2021
Contact plugs and methods forming same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations70
US12464763B2Nov 4, 2025
Hybrid nanostructure and fin structure device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12412777B2Sep 9, 2025
Reducing parasitic capacitance in field-effect transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12414354B2Sep 9, 2025
Semiconductor strutures with dielectric fins
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12266653B2Apr 1, 2025
Semiconductor structure and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12183735B2Dec 31, 2024
Semiconductor devices and methods of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12080607B2Sep 3, 2024
Structure and method for FinFET device with source/drain modulation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12074057B2Aug 27, 2024
Isolation structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12051695B2Jul 30, 2024
Semiconductor devices having gate dielectric layers of varying thicknesses and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11967532B2Apr 23, 2024
Gate spacers and methods of forming the same in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11804485B2Oct 31, 2023
Semiconductor devices and methods of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11749677B2Sep 5, 2023
Semiconductor structure and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11688791B2Jun 27, 2023
Gate structure and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11658074B2May 23, 2023
Structure and method for FinFET device with source/drain modulation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11532502B2Dec 20, 2022
Reducing parasitic capacitance in field-effect transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11239339B2Feb 1, 2022
Gate structure and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US10714342B2Jul 14, 2020
Semiconductor device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US12588498B2Mar 24, 2026
FinFET structure with controlled air gaps
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
TAIWAN SEMICONDUCTOR MFG
6 patentsUS6444544B1Sep 3, 2002
Method of forming an aluminum protection guard structure for a copper metal structure
TAIWAN SEMICONDUCTOR MFG76 citations96
US6380021B1Apr 30, 2002
Ultra-shallow junction formation by novel process sequence for PMOSFET
TAIWAN SEMICONDUCTOR MFG49 citations92
US7754571B2Jul 13, 2010
Method for forming a strained channel in a semiconductor device
TAIWAN SEMICONDUCTOR MFG11 citations83
US6207538B1Mar 27, 2001
Method for forming n and p wells in a semiconductor substrate using a single masking step
TAIWAN SEMICONDUCTOR MFG14 citations73
US6074905AJun 13, 2000
Formation of a thin oxide protection layer at poly sidewall and area surface
TAIWAN SEMICONDUCTOR MFG11 citations73
US7816686B2Oct 19, 2010
Forming silicides with reduced tailing on silicon germanium and silicon
TAIWAN SEMICONDUCTOR MFG7 citations69
Showing the top 50 of 104 patents by PatentIndex Score.