Inventor

YUH PERNG-FEI

US63 patents

⚠️ This page may combine multiple inventors who share the name “YUH PERNG-FEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YUH PERNG-FEI

TAIWAN SEMICONDUCTOR MFG CO LTD

Ferroelectric field-effect transistor (FeFET) memory

Memory device and operating method of the same

Memory device with source line control

Multiple stack high voltage circuit for memory

Sense amplifier for coupling effect reduction

Bit selection for power reduction in stacking structure during memory programming

Sense amplifier for coupling effect reduction

Radical-activated etching of metal oxides

Memory devices, semiconductor devices, and methods of operating a memory device

Semiconductor memory devices with diode-connected MOS

MRAM cell and MRAM

Nonvolatile SRAM

Memory device with source line control

MRAM cell and MRAM

Nonvolatile SRAM

MRAM cell, MRAM and IC with MRAM

Grid structures of ion beam etching (IBE) systems

Method for fabricating an integrated circuit comprising devices on opposing sides of a substrate

Ferroelectric field-effect transistor (FeFET) memory

Second word line combined with y-mux signal in high voltage memory program

Radical-activated etching of metal oxides

Non-volatile static random access memory (NVSRAM) with multiple magnetic tunnel junction cells

Memory device and operating method of the same

Memory devices, semiconductor devices, and methods of operations a memory device

Merged bit lines for high density memory array

Semiconductor memory devices with diode-connected MOS

Nanostructured channel regions for semiconductor devices

Bias generating devices and methods for generating bias

Sense amplifier for coupling effect reduction

Memory circuits and devices, and methods thereof

High-density and high-voltage-tolerable pure core memory cell

Multiple stack high voltage circuit for memory

Bit selection for power reduction in stacking structure during memory programming

Memory device and operating method of the same

Non-volatile static random access memory (nvSRAM) with multiple magnetic tunnel junction cells

Grid structures of ion beam etching (IBE) systems

Merged bit lines for high density memory array

Semiconductor memory devices with diode-connected MOS

Bias generating devices and methods for generating bias

Ferroelectric field-effect transistor (FeFET) memory

Nanostructured channel regions for semiconductor devices

Second word line combined with Y-MUX signal in high voltage memory program

Merged bit lines for high density memory array

Non-volatile static random access memory (nvSRAM) with multiple magnetic tunnel junction cells

Non-volatile static random access memory (nvSRAM) with multiple magnetic tunnel junction cells

LUXUL TECH INC

Lamp tube and lamp fixture with sensing capability

Automatic switching system and method for smart switch

UNIV CALIFORNIA

Optically pumped step quantum well IR source

YUH PERNG-FEI

Reference averaging for MRAM sense amplifiers

YUH PERNG FEI

Buffered nondestructive-readout Josephson memory cell with three gates