Inventor

GOTO KEN-ICHI

TW62 patents

⚠️ This page may combine multiple inventors who share the name “GOTO KEN-ICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GOTO KEN-ICHI

TAIWAN SEMICONDUCTOR MFG CO LTD

Method of fabricating epitaxial gate dielectrics and semiconductor device of the same

Spacer-defined back-end transistor as memory selector

High-density memory device with planar thin film transistor (TFT) selector and methods for making the same

2-D material transistor with vertical structure

Dislocation stress memorization technique (DSMT) on epitaxial channel devices

Process design to improve transistor variations and performance

Multi-gate semiconductor devices and methods of forming the same

Method of manufacturing a semiconductor device and a semiconductor device

Nano-electromechanical system (NEMS) device structure and method for forming the same

2-D material transistor with vertical structure

Method of manufacturing a semiconductor device and a semiconductor device

MOSFET with selective dopant deactivation underneath gate

Semiconductor device and manufacturing method thereof

Nano-electromechanical system (NEMS) device structure and method for forming the same

Epitaxial channel with a counter-halo implant to improve analog gain

Dislocation stress memorization technique (DSMT) on epitaxial channel devices

Semiconductor device having multiple active area layers and its formation thereof

Recess and epitaxial layer to improve transistor performance

Spacer-defined back-end transistor as memory selector

Semiconductor device and manufacturing method thereof

Nano-electromechanical system (NEMS) device structure and method for forming the same

Semiconductor device and manufacturing method thereof

Transistor having replacement gate and epitaxially grown replacement channel region

Transistor design

High-density memory device with planar thin film transistor (TFT) selector and methods for making the same

Method of dopant deactivation underneath gate

MOSFET with selective dopant deactivation underneath gate

Dislocation stress memorization technique (DSMT) on epitaxial channel devices

Drain sharing for memory cell thin film access transistors and methods for forming the same

Drain sharing for memory cell thin film access transistors and methods for forming the same

Semiconductor device and method of fabricating the same

Memory devices including transistors on multiple layers

TAIWAN SEMICONDUCTOR MFG

Tunnel field-effect transistors with superlattice channels

Tunnel field-effect transistor with narrow band-gap channel and strong gate coupling

Tunnel field-effect transistor with narrow band-gap channel and strong gate coupling

Tunnel field-effect transistor with narrow band-gap channel and strong gate coupling

Local charge and work function engineering on MOSFET

FinFET design controlling channel thickness

MITSUI CHEMICALS INC

Polyimides and polyamic acids

Fluorination agent and preparation and use of same

Process for producing fluorinated silicon compound

GOTO KEN-ICHI

Non-uniform channel junction-less transistor

SOI transistors with improved source/drain structures with enhanced strain

Wu wei-hao

FinFET method and structure with embedded underlying anti-punch through layer

WU ZHIQIANG

FinFET design controlling channel thickness

MITSUI TOATSU CHEMICALS

Processes for producing aromatic polycarbonate oligomer and aromatic polycarbonate

BHUWALKA KRISHNA KUMAR

Tunnel field-effect transistors with superlattice channels

HUANG HUAN-TSUNG

Local charge and work function engineering on MOSFET

WANG CHIH-CHING

Multi-gate semiconductor devices and methods of forming the same

SATHAIYA DHANYAKUMAR MAHAVEER

MOSFET with selective dopant deactivation underneath gate