Inventor
SUN YUAN-CHEN
TW25 patents
⚠️ This page may combine multiple inventors who share the name “SUN YUAN-CHEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
11 patentsUS9614086B1Apr 4, 2017
Conformal source and drain contacts for multi-gate field effect transistors
TAIWAN SEMICONDUCTOR MFG CO LTD27 citations94
US10269791B2Apr 23, 2019
Field-effect transistors having transition metal dichalcogenide channels and methods of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10164033B2Dec 25, 2018
Conformal source and drain contacts for multi-gate field effect transistors
TAIWAN SEMICONDUCTOR MFG CO LTD12 citations84
US10157985B2Dec 18, 2018
MOSFET with selective dopant deactivation underneath gate
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11063128B2Jul 13, 2021
Conformal source and drain contacts for multi-gate field effect transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12068374B2Aug 20, 2024
Method of dopant deactivation underneath gate
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11855141B2Dec 26, 2023
Local epitaxy nanofilms for nanowire stack GAA device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11410996B2Aug 9, 2022
Field-effect transistors having transition metal dichalcogenide channels and methods of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11164864B2Nov 2, 2021
Field-effect transistors having transition metal dichalcogenide channels and methods of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11043556B2Jun 22, 2021
Local epitaxy nanofilms for nanowire stack GAA device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10985246B2Apr 20, 2021
MOSFET with selective dopant deactivation underneath gate
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
IBM
7 patentsUS5461250AOct 24, 1995
SiGe thin film or SOI MOSFET and method for making the same
IBM386 citations98
US5780327AJul 14, 1998
Vertical double-gate field effect transistor
IBM68 citations96
US5689127ANov 18, 1997
Vertical double-gate field effect transistor
IBM71 citations96
US5117271AMay 26, 1992
Low capacitance bipolar junction transistor and fabrication process therfor
IBM56 citations96
US6774463B1Aug 10, 2004
Superconductor gate semiconductor channel field effect transistor
IBM70 citations95
US5801444ASep 1, 1998
Multilevel electronic structures containing copper layer and copper-semiconductor layers
IBM74 citations92
US5106767AApr 21, 1992
Process for fabricating low capacitance bipolar junction transistor
IBM56 citations91
TAIWAN SEMICONDUCTOR MFG
5 patentsUS6020255AFeb 1, 2000
Dual damascene interconnect process with borderless contact
TAIWAN SEMICONDUCTOR MFG105 citations97
US6083824AJul 4, 2000
Borderless contact
TAIWAN SEMICONDUCTOR MFG56 citations96
US6245639B1Jun 12, 2001
Method to reduce a reverse narrow channel effect for MOSFET devices
TAIWAN SEMICONDUCTOR MFG47 citations92
US7612364B2Nov 3, 2009
MOS devices with source/drain regions having stressed regions and non-stressed regions
TAIWAN SEMICONDUCTOR MFG13 citations84
US8048717B2Nov 1, 2011
Method and system for bonding 3D semiconductor devices
TAIWAN SEMICONDUCTOR MFG4 citations63