Inventor
LEE JAM-WEM
TW127 patents
⚠️ This page may combine multiple inventors who share the name “LEE JAM-WEM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
26 patentsUS11158634B1Oct 26, 2021
Backside PN junction diode
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations86
US11626719B2Apr 11, 2023
Electrostatic discharge (ESD) protection circuit and method of operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations85
US10643988B2May 5, 2020
Intelligent diode structures
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10283210B2May 7, 2019
Memory device with a fuse protection circuit
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10109366B2Oct 23, 2018
Memory device with a fuse protection circuit
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US12148746B2Nov 19, 2024
Integrated circuit and method of manufacturing same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations75
US11710962B2Jul 25, 2023
Device and method for operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations74
US11908859B2Feb 20, 2024
Semiconductor device including transistors sharing gates with structures having reduced parasitic circuit
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11862968B2Jan 2, 2024
Circuit and method for high voltage tolerant ESD protection
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11855073B2Dec 26, 2023
ESD structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11735587B2Aug 22, 2023
Backside PN junction diode
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11569223B2Jan 31, 2023
Integrated circuit and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11282830B2Mar 22, 2022
High voltage ESD protection apparatus
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11282831B2Mar 22, 2022
Semiconductor device having multiple electrostatic discharge (ESD) paths
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10803967B2Oct 13, 2020
Memory device with a fuse protection circuit
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10777546B2Sep 15, 2020
Planar and non-planar FET-based electrostatic discharge protection devices
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10643726B2May 5, 2020
Memory device with a fuse protection circuit
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10490461B2Nov 26, 2019
Double sided NMOS/PMOS structure and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10411005B2Sep 10, 2019
Intelligent diode structures
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10366992B2Jul 30, 2019
Semiconductor device including transistors sharing gates
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10262990B2Apr 16, 2019
Electrostatic discharge protection device for differential signal devices
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10134726B2Nov 20, 2018
Diode string implementation for electrostatic discharge protection
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10109621B2Oct 23, 2018
Low-capacitance electrostatic damage protection device and method of designing and making same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9887275B2Feb 6, 2018
Method of reducing the heights of source-drain sidewall spacers of FinFETs through etching
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9576945B2Feb 21, 2017
Methods and apparatus for increased holding voltage in silicon controlled rectifiers for ESD protection
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9548367B2Jan 17, 2017
Method of reducing the heights of source-drain sidewall spacers of FinFETs through etching and the FinFETs thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
TAIWAN SEMICONDUCTOR MFG
13 patentsUS7964893B2Jun 21, 2011
Forming ESD diodes and BJTs using FinFET compatible processes
TAIWAN SEMICONDUCTOR MFG37 citations93
US7700449B2Apr 20, 2010
Forming ESD diodes and BJTs using FinFET compatible processes
TAIWAN SEMICONDUCTOR MFG41 citations93
US9214540B2Dec 15, 2015
N-type metal oxide semiconductor (NMOS) transistor for electrostatic discharge (ESD)
TAIWAN SEMICONDUCTOR MFG19 citations92
US8928093B2Jan 6, 2015
FinFET body contact and method of making same
TAIWAN SEMICONDUCTOR MFG14 citations92
US9362266B1Jun 7, 2016
Electrostatic discharge protection device for differential signal devices
TAIWAN SEMICONDUCTOR MFG6 citations84
US9312384B2Apr 12, 2016
FinFET body contact and method of making same
TAIWAN SEMICONDUCTOR MFG10 citations84
US9214398B2Dec 15, 2015
Backside contacts for integrated circuit devices
TAIWAN SEMICONDUCTOR MFG5 citations84
US9209302B2Dec 8, 2015
Method of reducing the heights of source-drain sidewall spacers of FinFETs through etching
TAIWAN SEMICONDUCTOR MFG5 citations84
US9165829B2Oct 20, 2015
Double sided NMOS/PMOS structure and methods of forming the same
TAIWAN SEMICONDUCTOR MFG6 citations84
US8809961B2Aug 19, 2014
Electrostatic discharge (ESD) guard ring protective structure
TAIWAN SEMICONDUCTOR MFG7 citations84
US8570698B2Oct 29, 2013
ESD protection for FinFETs
TAIWAN SEMICONDUCTOR MFG11 citations84
US8049250B2Nov 1, 2011
Circuit and method for power clamp triggered dual SCR ESD protection
TAIWAN SEMICONDUCTOR MFG14 citations84
US9165926B2Oct 20, 2015
Dynamic threshold MOS and methods of forming the same
TAIWAN SEMICONDUCTOR MFG4 citations73
LEE JAM-WEM
7 patentsUS8400813B2Mar 19, 2013
One-time programmable fuse with ultra low programming current
LEE JAM-WEM23 citations92
US8153493B2Apr 10, 2012
FinFET process compatible native transistor
LEE JAM-WEM25 citations92
US8963200B2Feb 24, 2015
Methods and apparatus for increased holding voltage in silicon controlled rectifiers for ESD protection
LEE JAM-WEM13 citations84
US8841696B2Sep 23, 2014
High-trigger current SCR
LEE JAM-WEM11 citations84
US8742491B2Jun 3, 2014
FinFET process compatible native transistor
LEE JAM-WEM13 citations84
US8476736B2Jul 2, 2013
Low leakage diodes
LEE JAM-WEM14 citations84
US9576949B2Feb 21, 2017
Diode formed of PMOSFET and schottky diodes
LEE JAM-WEM3 citations73
LO CHING-HSIUNG
1 patentSONG MING-HSIANG
1 patentHUANG YUN-PEI
1 patentTSAI TSUNG-CHE
1 patentShowing the top 50 of 127 patents by PatentIndex Score.