P

Inventor

LEE JAM-WEM

TW127 patents
⚠️ This page may combine multiple inventors who share the name “LEE JAM-WEM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

26 patents
US11158634B1Oct 26, 2021

Backside PN junction diode

TAIWAN SEMICONDUCTOR MFG CO LTD11 citations86
US11626719B2Apr 11, 2023

Electrostatic discharge (ESD) protection circuit and method of operating the same

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations85
US10643988B2May 5, 2020

Intelligent diode structures

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10283210B2May 7, 2019

Memory device with a fuse protection circuit

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10109366B2Oct 23, 2018

Memory device with a fuse protection circuit

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US12148746B2Nov 19, 2024

Integrated circuit and method of manufacturing same

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations75
US11710962B2Jul 25, 2023

Device and method for operating the same

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations74
US11908859B2Feb 20, 2024

Semiconductor device including transistors sharing gates with structures having reduced parasitic circuit

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11862968B2Jan 2, 2024

Circuit and method for high voltage tolerant ESD protection

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11855073B2Dec 26, 2023

ESD structure

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11735587B2Aug 22, 2023

Backside PN junction diode

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11569223B2Jan 31, 2023

Integrated circuit and method for fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11282830B2Mar 22, 2022

High voltage ESD protection apparatus

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11282831B2Mar 22, 2022

Semiconductor device having multiple electrostatic discharge (ESD) paths

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10803967B2Oct 13, 2020

Memory device with a fuse protection circuit

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10777546B2Sep 15, 2020

Planar and non-planar FET-based electrostatic discharge protection devices

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10643726B2May 5, 2020

Memory device with a fuse protection circuit

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10490461B2Nov 26, 2019

Double sided NMOS/PMOS structure and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10411005B2Sep 10, 2019

Intelligent diode structures

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10366992B2Jul 30, 2019

Semiconductor device including transistors sharing gates

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10262990B2Apr 16, 2019

Electrostatic discharge protection device for differential signal devices

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10134726B2Nov 20, 2018

Diode string implementation for electrostatic discharge protection

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10109621B2Oct 23, 2018

Low-capacitance electrostatic damage protection device and method of designing and making same

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9887275B2Feb 6, 2018

Method of reducing the heights of source-drain sidewall spacers of FinFETs through etching

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9576945B2Feb 21, 2017

Methods and apparatus for increased holding voltage in silicon controlled rectifiers for ESD protection

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9548367B2Jan 17, 2017

Method of reducing the heights of source-drain sidewall spacers of FinFETs through etching and the FinFETs thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

TAIWAN SEMICONDUCTOR MFG

13 patents
US7964893B2Jun 21, 2011

Forming ESD diodes and BJTs using FinFET compatible processes

TAIWAN SEMICONDUCTOR MFG37 citations93
US7700449B2Apr 20, 2010

Forming ESD diodes and BJTs using FinFET compatible processes

TAIWAN SEMICONDUCTOR MFG41 citations93
US9214540B2Dec 15, 2015

N-type metal oxide semiconductor (NMOS) transistor for electrostatic discharge (ESD)

TAIWAN SEMICONDUCTOR MFG19 citations92
US8928093B2Jan 6, 2015

FinFET body contact and method of making same

TAIWAN SEMICONDUCTOR MFG14 citations92
US9362266B1Jun 7, 2016

Electrostatic discharge protection device for differential signal devices

TAIWAN SEMICONDUCTOR MFG6 citations84
US9312384B2Apr 12, 2016

FinFET body contact and method of making same

TAIWAN SEMICONDUCTOR MFG10 citations84
US9214398B2Dec 15, 2015

Backside contacts for integrated circuit devices

TAIWAN SEMICONDUCTOR MFG5 citations84
US9209302B2Dec 8, 2015

Method of reducing the heights of source-drain sidewall spacers of FinFETs through etching

TAIWAN SEMICONDUCTOR MFG5 citations84
US9165829B2Oct 20, 2015

Double sided NMOS/PMOS structure and methods of forming the same

TAIWAN SEMICONDUCTOR MFG6 citations84
US8809961B2Aug 19, 2014

Electrostatic discharge (ESD) guard ring protective structure

TAIWAN SEMICONDUCTOR MFG7 citations84
US8570698B2Oct 29, 2013

ESD protection for FinFETs

TAIWAN SEMICONDUCTOR MFG11 citations84
US8049250B2Nov 1, 2011

Circuit and method for power clamp triggered dual SCR ESD protection

TAIWAN SEMICONDUCTOR MFG14 citations84
US9165926B2Oct 20, 2015

Dynamic threshold MOS and methods of forming the same

TAIWAN SEMICONDUCTOR MFG4 citations73

LEE JAM-WEM

7 patents

LO CHING-HSIUNG

1 patent

SONG MING-HSIANG

1 patent

HUANG YUN-PEI

1 patent

TSAI TSUNG-CHE

1 patent

Showing the top 50 of 127 patents by PatentIndex Score.