Inventor
CHEN TSE-AN
TW22 patents
Patents
22 patentsUS11244866B2Feb 8, 2022
Low dimensional material device and method
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11245024B2Feb 8, 2022
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations71
US11094811B2Aug 17, 2021
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations71
US12400860B2Aug 26, 2025
Semiconductor device with two-dimensional materials
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12211931B2Jan 28, 2025
Fin field-effect transistor device with low-dimensional material and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11688605B2Jun 27, 2023
Semiconductor device with two-dimensional materials
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11476356B2Oct 18, 2022
Fin field-effect transistor device with low-dimensional material and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11158807B2Oct 26, 2021
Field effect transistor and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12490478B2Dec 2, 2025
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12211930B2Jan 28, 2025
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12191144B2Jan 7, 2025
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12033850B2Jul 9, 2024
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11508572B2Nov 22, 2022
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12230680B2Feb 18, 2025
Manufacturing method of semiconductor device including hBNC layer, and manufacturing method of HBNC layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12224334B2Feb 11, 2025
Semiconductor device with gate dielectric formed using selective deposition
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12151213B2Nov 26, 2024
Method of manufacturing semiconductor devices including the steps of removing one or more of the nanotubes from the stack of nanotubes, and/or removing spacers that surrounds each of the plurality of nanotubes, and forming gate dielectric and/or gate electrode to the nanotubes
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11749528B2Sep 5, 2023
Method of manufacturing semiconductor devices including the steps of removing a plurality of spacers that surrounds each of the plurality of nanotubes into a layer of nanotubes, and forming gate dielectric and/or gate electrode
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11699739B2Jul 11, 2023
Semiconductor device with gate dielectric formed using selective deposition
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11342181B2May 24, 2022
Semiconductor devices and methods of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12237375B2Feb 25, 2025
Semiconductor structure of stacked two-dimensional material layers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations58
US11784225B2Oct 10, 2023
Semiconductor structure, method of forming stacked unit layers and method of forming stacked two-dimensional material layers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations58
US11289582B2Mar 29, 2022
Single-crystal hexagonal boron nitride layer and method forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations58