Inventor
CHU CHE-JUNG
TW15 patents
⚠️ This page may combine multiple inventors who share the name “CHU CHE-JUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
11 patentsUS10014218B1Jul 3, 2018
Method for forming semiconductor device structure with bumps
TAIWAN SEMICONDUCTOR MFG CO LTD13 citations83
US9880192B2Jan 30, 2018
Method of manufacturing a motion sensor device
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US9865609B2Jan 9, 2018
One-time-programming (OTP) memory cell with floating gate shielding
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations72
US11088108B2Aug 10, 2021
Chip package structure including ring-like structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US10170429B2Jan 1, 2019
Method for forming package structure including intermetallic compound
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations70
US11211318B2Dec 28, 2021
Bump layout for coplanarity improvement
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations68
US12183709B2Dec 31, 2024
Chip package structure with ring-like structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11848302B2Dec 19, 2023
Chip package structure with ring-like structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11545463B2Jan 3, 2023
Chip package structure with ring-like structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US9997601B2Jun 12, 2018
Metal-oxide-semiconductor field-effect transistor with extended gate dielectric layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9561954B2Feb 7, 2017
Method of fabricating MEMS devices having a plurality of cavities
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
TAIWAN SEMICONDUCTOR MFG
3 patentsUS7091535B2Aug 15, 2006
High voltage device embedded non-volatile memory cell and fabrication method
TAIWAN SEMICONDUCTOR MFG12 citations80
US9209298B2Dec 8, 2015
Metal-oxide-semiconductor field-effect transistor with extended gate dielectric layer
TAIWAN SEMICONDUCTOR MFG1 citations51
US8916943B2Dec 23, 2014
MEMS devices having a plurality of cavities
TAIWAN SEMICONDUCTOR MFG0 citations51