Inventor
HWANG JACK
US27 patents
⚠️ This page may combine multiple inventors who share the name “HWANG JACK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTEL CORP
22 patentsUS9466565B2Oct 11, 2016
Self-aligned contacts
INTEL CORP24 citations97
US9508821B2Nov 29, 2016
Self-aligned contacts
INTEL CORP13 citations92
US7439113B2Oct 21, 2008
Forming dual metal complementary metal oxide semiconductor integrated circuits
INTEL CORP23 citations92
US7102141B2Sep 5, 2006
Flash lamp annealing apparatus to generate electromagnetic radiation having selective wavelengths
INTEL CORP19 citations91
US6638802B1Oct 28, 2003
Forming strained source drain junction field effect transistors
INTEL CORP35 citations89
US11887891B2Jan 30, 2024
Self-aligned contacts
INTEL CORP2 citations84
US10930557B2Feb 23, 2021
Self-aligned contacts
INTEL CORP2 citations84
US10141226B2Nov 27, 2018
Self-aligned contacts
INTEL CORP2 citations84
US7223660B2May 29, 2007
Flash assisted annealing
INTEL CORP13 citations84
US7758238B2Jul 20, 2010
Temperature measurement with reduced extraneous infrared in a processing chamber
INTEL CORP8 citations80
US7109443B2Sep 19, 2006
Multi-zone reflecting device for use in flash lamp processes
INTEL CORP16 citations80
US7479431B2Jan 20, 2009
Strained NMOS transistor featuring deep carbon doped regions and raised donor doped source and drain
INTEL CORP6 citations73
US6936518B2Aug 30, 2005
Creating shallow junction transistors
INTEL CORP8 citations73
US6808993B2Oct 26, 2004
Ultra-thin gate dielectrics
INTEL CORP8 citations65
US12266571B2Apr 1, 2025
Self-aligned contacts
INTEL CORP0 citations62
US11600524B2Mar 7, 2023
Self-aligned contacts
INTEL CORP0 citations62
US7892971B2Feb 22, 2011
Sub-second annealing processes for semiconductor devices
INTEL CORP5 citations59
US6911706B2Jun 28, 2005
Forming strained source drain junction field effect transistors
INTEL CORP2 citations59
US10629483B2Apr 21, 2020
Self-aligned contacts
INTEL CORP0 citations52
US9892967B2Feb 13, 2018
Self-aligned contacts
INTEL CORP0 citations52
US7858981B2Dec 28, 2010
Strained NMOS transistor featuring deep carbon doped regions and raised donor doped source and drain
INTEL CORP0 citations52
US7790587B2Sep 7, 2010
Method to reduce junction leakage through partial regrowth with ultrafast anneal and structures formed thereby
INTEL CORP0 citations47