P

Inventor

ONO SYOTARO

JP81 patents
⚠️ This page may combine multiple inventors who share the name “ONO SYOTARO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOSHIBA KK

39 patents
US6787848B2Sep 7, 2004

Vertical type power mosfet having trenched gate structure

TOSHIBA KK81 citations98
US6693338B2Feb 17, 2004

Power semiconductor device having RESURF layer

TOSHIBA KK119 citations98
US7576393B2Aug 18, 2009

Semiconductor device and method of manufacturing the same

TOSHIBA KK36 citations93
US7541643B2Jun 2, 2009

Semiconductor device

TOSHIBA KK25 citations93
US7230297B2Jun 12, 2007

Trench-gated MOSFET including schottky diode therein

TOSHIBA KK28 citations93
US7061047B2Jun 13, 2006

Semiconductor device having trench gate structure and manufacturing method thereof

TOSHIBA KK26 citations93
US6838730B1Jan 4, 2005

Semiconductor device

TOSHIBA KK36 citations93
US8013360B2Sep 6, 2011

Semiconductor device having a junction of P type pillar region and N type pillar region

TOSHIBA KK29 citations92
US7737469B2Jun 15, 2010

Semiconductor device having superjunction structure formed of p-type and n-type pillar regions

TOSHIBA KK36 citations92
US7061060B2Jun 13, 2006

Offset-gate-type semiconductor device

TOSHIBA KK19 citations92
US6720618B2Apr 13, 2004

Power MOSFET device

TOSHIBA KK24 citations92
US6552389B2Apr 22, 2003

Offset-gate-type semiconductor device

TOSHIBA KK19 citations92
US9349721B2May 24, 2016

Semiconductor device

TOSHIBA KK11 citations84
US9059284B2Jun 16, 2015

Semiconductor device

TOSHIBA KK7 citations84
US9041101B2May 26, 2015

Power semiconductor device

TOSHIBA KK8 citations84
US8860144B2Oct 14, 2014

Power semiconductor device

TOSHIBA KK8 citations84
US8049270B2Nov 1, 2011

Semiconductor device

TOSHIBA KK16 citations84
US7989910B2Aug 2, 2011

Semiconductor device including a resurf region with forward tapered teeth

TOSHIBA KK11 citations84
US7919824B2Apr 5, 2011

Semiconductor device and method of manufacturing the same

TOSHIBA KK17 citations84
US7812392B2Oct 12, 2010

Semiconductor device

TOSHIBA KK11 citations84
US7759732B2Jul 20, 2010

Power semiconductor device

TOSHIBA KK8 citations84
US7759733B2Jul 20, 2010

Power semiconductor device and method for producing the same

TOSHIBA KK13 citations84
US7755138B2Jul 13, 2010

Semiconductor device

TOSHIBA KK11 citations84
US7622771B2Nov 24, 2009

Semiconductor apparatus

TOSHIBA KK10 citations84
US7605426B2Oct 20, 2009

Power semiconductor device

TOSHIBA KK11 citations84
US7564097B2Jul 21, 2009

Trench-gated MOSFET including schottky diode therein

TOSHIBA KK10 citations84
US7485921B2Feb 3, 2009

Trench gate type MOS transistor semiconductor device

TOSHIBA KK10 citations84
US7253473B2Aug 7, 2007

Semiconductor device and method of manufacturing the same

TOSHIBA KK10 citations84
US7227225B2Jun 5, 2007

Semiconductor device having a vertical MOS trench gate structure

TOSHIBA KK12 citations84
US6977414B2Dec 20, 2005

Semiconductor device

TOSHIBA KK15 citations84
US6818945B2Nov 16, 2004

Semiconductor device

TOSHIBA KK14 citations84
US7045426B2May 16, 2006

Vertical type power MOSFET having trenched gate structure

TOSHIBA KK7 citations74
US6878992B2Apr 12, 2005

Vertical-type power MOSFET with a gate formed in a trench

TOSHIBA KK8 citations74
US7800175B2Sep 21, 2010

Vertical power semiconductor device with high breakdown voltage corresponding to edge termination and device regions

TOSHIBA KK4 citations63
US7663186B2Feb 16, 2010

Semiconductor device

TOSHIBA KK4 citations63
US7479678B2Jan 20, 2009

Semiconductor element and method of manufacturing the same

TOSHIBA KK4 citations63
US7061048B2Jun 13, 2006

Power MOSFET device

TOSHIBA KK2 citations63
US10411117B2Sep 10, 2019

Semiconductor device

TOSHIBA KK1 citations62
US9142627B2Sep 22, 2015

Semiconductor device

TOSHIBA KK3 citations62

SAITO WATARU

7 patents

ONO SYOTARO

3 patents

OHTA HIROSHI

1 patent

Showing the top 50 of 81 patents by PatentIndex Score.