Inventor
MINUTILLO NICHOLAS
US10 patents
Patents
10 patentsUS11276694B2Mar 15, 2022
Transistor structure with indium phosphide channel
INTEL CORP2 citations73
US11257904B2Feb 22, 2022
Source-channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs)
INTEL CORP2 citations73
US11756998B2Sep 12, 2023
Source-channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs)
INTEL CORP0 citations62
US12342611B2Jun 24, 2025
Source or drain structures with vertical trenches
INTEL CORP0 citations59
US11935887B2Mar 19, 2024
Source or drain structures with vertical trenches
INTEL CORP1 citations59
US12224337B2Feb 11, 2025
PGaN enhancement mode HEMTs with dopant diffusion spacer
INTEL CORP0 citations57
US11695081B2Jul 4, 2023
Channel layer formation for III-V metal-oxide-semiconductor field effect transistors (MOSFETs)
INTEL CORP0 citations52
US11508577B2Nov 22, 2022
Channel layer formation for III-V metal-oxide-semiconductor field effect transistors (MOSFETs)
INTEL CORP0 citations52
US11355621B2Jun 7, 2022
Non-planar semiconductor device including a replacement channel structure
INTEL CORP0 citations52
US12439627B2Oct 7, 2025
Gate structures to enable lower subthreshold slope in gallium nitride-based transistors
INTEL CORP0 citations39