Inventor
KOINUMA HIDEOMI
JP34 patents
⚠️ This page may combine multiple inventors who share the name “KOINUMA HIDEOMI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
JAPAN SCIENCE & TECH CORP
7 patentsUS6344084B1Feb 5, 2002
Combinatorial molecular layer epitaxy device
JAPAN SCIENCE & TECH CORP526 citations99
US6057561AMay 2, 2000
Optical semiconductor element
JAPAN SCIENCE & TECH CORP168 citations97
US6459763B1Oct 1, 2002
Combinatorial X-ray diffractor
JAPAN SCIENCE & TECH CORP37 citations93
US7029528B2Apr 18, 2006
Method for flattening surface of oxide crystal to ultra high degree
JAPAN SCIENCE & TECH CORP3 citations63
US6919138B2Jul 19, 2005
Titanium dioxide cobalt magnetic film and its manufacturing method
JAPAN SCIENCE & TECH CORP4 citations63
US6677581B1Jan 13, 2004
High energy electron diffraction apparatus
JAPAN SCIENCE & TECH CORP4 citations63
US6902317B2Jun 7, 2005
Method and device for measuring thermoelectric characteristics of combinatorial specimen
JAPAN SCIENCE & TECH CORP2 citations56
JAPAN SCIENCE & TECH AGENCY
7 patentsUS7911927B2Mar 22, 2011
Layered Bi compound nanoplate array of such nanoplates, their making methods and devices using them
JAPAN SCIENCE & TECH AGENCY3 citations63
US6929695B2Aug 16, 2005
Method for preparing single crystal oxide thin film
JAPAN SCIENCE & TECH AGENCY4 citations63
US7727686B2Jun 1, 2010
Method of making LC polymer film
JAPAN SCIENCE & TECH AGENCY2 citations54
US7692184B2Apr 6, 2010
Substrate with organic thin film, and transistor using same
JAPAN SCIENCE & TECH AGENCY4 citations54
US7507290B2Mar 24, 2009
Flux assisted solid phase epitaxy
JAPAN SCIENCE & TECH AGENCY0 citations52
US7442252B2Oct 28, 2008
Method for producing single crystal of multi-element oxide single crystal containing bismuth as constituting element
JAPAN SCIENCE & TECH AGENCY0 citations52
US7150788B2Dec 19, 2006
Method for manufacturing in-plane lattice constant adjusting substrate and in-plane lattice constant adjusting substrate
JAPAN SCIENCE & TECH AGENCY0 citations39
SEMICONDUCTOR ENERGY LAB
6 patentsUS5221427AJun 22, 1993
Plasma generating device and method of plasma processing
SEMICONDUCTOR ENERGY LAB151 citations99
US5549780AAug 27, 1996
Method for plasma processing and apparatus for plasma processing
SEMICONDUCTOR ENERGY LAB320 citations98
US5369336ANov 29, 1994
Plasma generating device
SEMICONDUCTOR ENERGY LAB62 citations96
US5198724AMar 30, 1993
Plasma processing method and plasma generating device
SEMICONDUCTOR ENERGY LAB80 citations96
US5569502AOct 29, 1996
Film formation apparatus and method for forming a film
SEMICONDUCTOR ENERGY LAB41 citations92
US5075282ADec 24, 1991
Printing method of forming oxide superconducting films on La2 Cu O.sub.
SEMICONDUCTOR ENERGY LAB12 citations69
NAT INST FOR MATERIALS SCIENCE
3 patentsUS7259409B2Aug 21, 2007
Thin film device and its fabrication method
NAT INST FOR MATERIALS SCIENCE6 citations60
US6855972B2Feb 15, 2005
Composite integrated circuit and its fabrication method
NAT INST FOR MATERIALS SCIENCE0 citations48
US8377211B2Feb 19, 2013
Device for vacuum processing
NAT INST FOR MATERIALS SCIENCE0 citations46
KOINUMA HIDEOMI
2 patentsUNIV TOKYO
2 patentsMATSUSHITA ELECTRIC INDUSTRIAL CO LTD
2 patentsUS6433269B1Aug 13, 2002
Silicon photoelectric conversion device, method of fabricating the same and method of processing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD2 citations63
US6593164B2Jul 15, 2003
Silicon photoelectric conversion device, method of manufacturing the same and method of processing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD0 citations52