P

Inventor

WRISTERS DERICK

US14 patents

Patents

14 patents
US6093611AJul 25, 2000

Oxide liner for high reliability with reduced encroachment of the source/drain region

ADVANCED MICRO DEVICES INC294 citations99
US5939763AAug 17, 1999

Ultrathin oxynitride structure and process for VLSI applications

ADVANCED MICRO DEVICES INC263 citations97
US6245689B1Jun 12, 2001

Process for reliable ultrathin oxynitride formation

ADVANCED MICRO DEVICES INC107 citations96
US5943550AAug 24, 1999

Method of processing a semiconductor wafer for controlling drive current

ADVANCED MICRO DEVICES INC71 citations96
US6949436B2Sep 27, 2005

Composite spacer liner for improved transistor performance

ADVANCED MICRO DEVICES INC19 citations92
US6104077AAug 15, 2000

Semiconductor device having gate electrode with a sidewall air gap

ADVANCED MICRO DEVICES INC46 citations92
US6833307B1Dec 21, 2004

Method for manufacturing a semiconductor component having an early halo implant

ADVANCED MICRO DEVICES INC38 citations91
US5977600ANov 2, 1999

Formation of shortage protection region

ADVANCED MICRO DEVICES INC19 citations90
US6638829B1Oct 28, 2003

Semiconductor structure having a metal gate electrode and elevated salicided source/drain regions and a method for manufacture

ADVANCED MICRO DEVICES INC15 citations84
US6162694ADec 19, 2000

Method of forming a metal gate electrode using replaced polysilicon structure

ADVANCED MICRO DEVICES INC19 citations84
US7208383B1Apr 24, 2007

Method of manufacturing a semiconductor component

ADVANCED MICRO DEVICES INC19 citations83
US6159812ADec 12, 2000

Reduced boron diffusion by use of a pre-anneal

ADVANCED MICRO DEVICES INC16 citations82
US6674135B1Jan 6, 2004

Semiconductor structure having elevated salicided source/drain regions and metal gate electrode on nitride/oxide dielectric

ADVANCED MICRO DEVICES INC5 citations63
US6100148AAug 8, 2000

Semiconductor device having a liner defining the depth of an active region, and fabrication thereof

ADVANCED MICRO DEVICES INC3 citations63