Inventor · disambiguated record
Tsung-Yao Wen
Also filed as: WEN TSUNG YAO
28 granted patents·146 citations·filing 2013–2020
96Inventor score
Top patents by PatentIndex Score
28 records- 0198US9570580B1Replacement gate process for FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 14, 2017·23 cites·20 claims
- 0297US9275905B1Method of forming semiconductor structure with anti-punch through structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 1, 2016·26 cites·20 claims
- 0396US9425317B1Fin field effect transistor (FinFET) device structure with Ge-doped inter-layer dielectric (ILD) structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 23, 2016·19 cites·19 claims
- 0495US10153280B2Replacement gate process for FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 11, 2018·7 cites·19 claims
- 0595US9450046B2Semiconductor structure with fin structure and wire structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 20, 2016·14 cites·20 claims
- 0693US10418363B2Replacement gate process for FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 17, 2019·5 cites·20 claims
- 0791US10062688B2Semiconductor device with epitaxial source/drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 28, 2018·7 cites·19 claims
- 0891US9893191B2FinFET transistor with u-shaped channelTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 13, 2018·9 cites·20 claims
- 0990US10854605B2Replacement gate process for FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 1, 2020·3 cites·20 claims
- 1090US9953836B2Barrier layer above anti-punch through (APT) implant region to improve mobility of channel region of fin field effect transistor (FinFET) device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 24, 2018·5 cites·19 claims
- 1188US10163902B2FinFET transistor with fin back biasingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 25, 2018·3 cites·20 claims
- 1285US9847329B2Structure of fin feature and method of making sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 19, 2017·5 cites·20 claims
- 1384US11037787B2Method of semiconductor device fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 15, 2021·3 cites·20 claims
- 1484US10169515B2Layout modification method and systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 1, 2019·4 cites·20 claims
- 1583US9917086B2FinFET transistor with fin back biasingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 13, 2018·2 cites·20 claims
- 1682US10276380B2Method of semiconductor device fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 30, 2019·5 cites·20 claims
- 1780US10446396B2Method of semiconductor device fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 15, 2019·2 cites·20 claims
- 1878US10522540B2FinFET transistor with fin back biasingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·1 cites·20 claims
- 1976US9502542B2FinFET transistor with fin back biasingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 22, 2016·2 cites·20 claims
- 2074US11569236B2Replacement gate process for FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 31, 2023·0 cites·20 claims
- 2173US9595442B2Method of forming semiconductor structure with anti-punch through structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 14, 2017·1 cites·20 claims
- 2268US10868006B2FinFET transistor with fin back biasingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·0 cites·20 claims
- 2362US11158508B2Barrier layer above anti-punch through (APT) implant region to improve mobility of channel region of fin field effect transistor (finFET) device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 26, 2021·0 cites·20 claims
- 2457US9484244B2Structures and methods for forming fin structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 1, 2016·0 cites·25 claims
- 2555US9934961B2Methods for forming fin structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 3, 2018·0 cites·20 claims
- 2652US9941372B2Semiconductor device having electrode and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 10, 2018·0 cites·20 claims
- 2749US9601377B2FinFET formation process and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Mar 21, 2017·0 cites·20 claims
- 2849US9337293B2Semiconductor device having electrode and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 10, 2016·0 cites·19 claims
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