Inventor

THEN HAN WUI

US256 patents

⚠️ This page may combine multiple inventors who share the name “THEN HAN WUI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

THEN HAN WUI

INTEL CORP

Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabrication

Light-emitting diode (LED) and micro LED substrates and methods for making the same

Ferroelectric-based field-effect transistor with threshold voltage switching for enhanced on-state and off-state performance

Transition metal dichalcogenides (TMDCS) over III-nitride heteroepitaxial layers

Group III-N nanowire transistors

Wurtzite heteroepitaxial structures with inclined sidewall facets for defect propagation control in silicon CMOS-compatible semiconductor devices

III-N epitaxial device structures on free standing silicon mesas

Group III-N nanowire transistors

Group III-N transistor on nanoscale template structures

N-channel gallium nitride transistors

Deep gate-all-around semiconductor device having germanium or group III-V active layer

Forming LED structures on silicon fins

Nonplanar III-N transistors with compositionally graded semiconductor channels

III-N material structure for gate-recessed transistors

Group III-N transistors on nanoscale template structures

Low sheet resistance GaN channel on Si substrates using InAlN and AlGaN bi-layer capping stack

III-N material structure for gate-recessed transistors

Group III-N nanowire transistors

Lattice mismatched hetero-epitaxial film

Nonplanar III-N transistors with compositionally graded semiconductor channels

Group III-N transistors on nanoscale template structures

III-N material structure for gate-recessed transistors

Defect transferred and lattice mismatched epitaxial film

Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation

Epitaxial film on nanoscale structure

Direct bonding in microelectronic assemblies

Microelectronic assemblies with inductors in direct bonding regions

III-N tunnel device architectures and high frequency mixers employing a III-N tunnel device

Microelectronic assemblies with inductors in direct bonding regions

PILLARISETTY RAVI

Trench confined epitaxially grown device layer(s)

Trench confined epitaxially grown device layer(s)

Contact techniques and configurations for reducing parasitic resistance in nanowire transistors

Deep gate-all-around semiconductor device having germanium or group III-V active layer

Techniques and configuration for stacking transistors of an integrated circuit device

Deep gate-all-around semiconductor device having germanium or group III-V active layer

Semiconductor device having germanium active layer with underlying parasitic leakage barrier layer

THEN HAN WUI

Group III-N nanowire transistors

High voltage field effect transistors

Nonplanar III-N transistors with compositionally graded semiconductor channels

Group III-N transistors on nanoscale template structures

Non-planar III-N transistor

III-N material structure for gate-recessed transistors

Group III-N transistors on nanoscale template structures

UNIV ILLINOIS

Transistor laser devices and methods

Optical bandwidth enhancement of light emitting and lasing transistor devices and circuits

Method and apparatus for producing linearized optical signals with a light-emitting transistor

DEWEY GILBERT

Non-planar III-V field effect transistors with conformal metal gate electrode and nitrogen doping of gate dielectric interface

RADOSAVLJEVIC MARKO

Non-planar semiconductor device having channel region with low band-gap cladding layer

WALTER GABRIEL

High speed light emitting semiconductor methods and devices

DASGUPTA SANSAPTAK

Epitaxial buffer layers for group III-N transistors on silicon substrates