Inventor
OH GYUHWAN
KR14 patents
⚠️ This page may combine multiple inventors who share the name “OH GYUHWAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
8 patentsUS9496223B2Nov 15, 2016
Semiconductor devices including spacers
SAMSUNG ELECTRONICS CO LTD8 citations83
US9029828B2May 12, 2015
Phase-change memory devices including thermally-isolated phase-change layers and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD9 citations83
US7863173B2Jan 4, 2011
Variable resistance non-volatile memory cells and methods of fabricating same
SAMSUNG ELECTRONICS CO LTD18 citations82
US11127900B2Sep 21, 2021
Variable resistance memory devices, and methods of forming variable resistance memory devices
SAMSUNG ELECTRONICS CO LTD0 citations60
US11195997B2Dec 7, 2021
Variable resistance memory devices including self-heating layer and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations58
US10720577B2Jul 21, 2020
Variable resistance memory devices, and methods of forming variable resistance memory devices
SAMSUNG ELECTRONICS CO LTD0 citations50
US11387410B2Jul 12, 2022
Semiconductor device including data storage material pattern
SAMSUNG ELECTRONICS CO LTD0 citations48
US11502132B2Nov 15, 2022
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations46
OH GYUHWAN
3 patentsUS8278206B2Oct 2, 2012
Variable resistance memory device and methods of forming the same
OH GYUHWAN12 citations82
US8558348B2Oct 15, 2013
Variable resistance memory device and methods of forming the same
OH GYUHWAN5 citations71
US8501623B2Aug 6, 2013
Method of forming a semiconductor device having a metal silicide and alloy layers as electrode
OH GYUHWAN6 citations70