Inventor
NEILSON JOHN M S
US27 patents
⚠️ This page may combine multiple inventors who share the name “NEILSON JOHN M S”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HARRIS CORP
13 patentsUS5079608AJan 7, 1992
Power MOSFET transistor circuit with active clamp
HARRIS CORP233 citations97
US5164802ANov 17, 1992
Power vdmosfet with schottky on lightly doped drain of lateral driver fet
HARRIS CORP94 citations94
US5095343AMar 10, 1992
Power MOSFET
HARRIS CORP58 citations94
US5424563AJun 13, 1995
Apparatus and method for increasing breakdown voltage ruggedness in semiconductor devices
HARRIS CORP39 citations92
US5399892AMar 21, 1995
Mesh geometry for MOS-gated semiconductor devices
HARRIS CORP27 citations92
US5382825AJan 17, 1995
Spiral edge passivation structure for semiconductor devices
HARRIS CORP27 citations92
US5323036AJun 21, 1994
Power FET with gate segments covering drain regions disposed in a hexagonal pattern
HARRIS CORP49 citations92
US5468668ANov 21, 1995
Method of forming MOS-gated semiconductor devices having mesh geometry pattern
HARRIS CORP17 citations81
US5455442AOct 3, 1995
COMFET switch and method
HARRIS CORP14 citations74
US5422288AJun 6, 1995
Method of doping a JFET region in a MOS-gated semiconductor device
HARRIS CORP8 citations73
US5940689AAug 17, 1999
Method of fabricating UMOS semiconductor devices using a self-aligned, reduced mask process
HARRIS CORP4 citations62
US5218220AJun 8, 1993
Power fet having reduced threshold voltage
HARRIS CORP6 citations62
US5243211ASep 7, 1993
Power fet with shielded channels
HARRIS CORP1 citations52
RCA CORP
11 patentsUS4158206AJun 12, 1979
Semiconductor device
RCA CORP79 citations96
US4532534AJul 30, 1985
MOSFET with perimeter channel
RCA CORP76 citations94
US4639754AJan 27, 1987
Vertical MOSFET with diminished bipolar effects
RCA CORP43 citations92
US4199386AApr 22, 1980
Method of diffusing aluminum into monocrystalline silicon
RCA CORP41 citations92
US4639762AJan 27, 1987
MOSFET with reduced bipolar effects
RCA CORP45 citations91
US4631564ADec 23, 1986
Gate shield structure for power MOS device
RCA CORP27 citations91
US4292646ASep 29, 1981
Semiconductor thyristor device having integral ballast means
RCA CORP7 citations64
US4398206AAug 9, 1983
Transistor with integrated diode and resistor
RCA CORP4 citations63
US4214255AJul 22, 1980
Gate turn-off triac with dual low conductivity regions contacting central gate region
RCA CORP6 citations63
US4156248AMay 22, 1979
Gate turn-off semiconductor controlled rectifier device with highly doped buffer region portion
RCA CORP4 citations63
US4297149AOct 27, 1981
Method of treating SiPOS passivated high voltage semiconductor device
RCA CORP5 citations54