Inventor
MISAWA YUTAKA
JP23 patents
Patents
23 patentsUS5096882AMar 17, 1992
Process for controlling oxygen content of superconductive oxide, superconductive device and process for production thereof
HITACHI LTD75 citations96
US4954855ASep 4, 1990
Thin film transistor formed on insulating substrate
HITACHI LTD57 citations96
US5367171ANov 22, 1994
Electron microscope specimen holder
HITACHI LTD74 citations94
US5350921ASep 27, 1994
Analytical electron microscope and a method of operating such an electron microscope
HITACHI LTD49 citations92
US5294336AMar 15, 1994
Apparatus for liquid chromatography for separating AIC components from hemoglobin in blood
HITACHI LTD30 citations92
US5084355AJan 28, 1992
Laminar structure comprising organic material and inorganic material
HITACHI LTD30 citations92
US4735916AApr 5, 1988
Method of fabricating bipolar transistors and insulated gate field effect transistors having doped polycrystalline silicon conductors
HITACHI LTD43 citations92
US4295115AOct 13, 1981
Semiconductor absolute pressure transducer assembly and method
HITACHI LTD44 citations92
US4193826AMar 18, 1980
Vapor phase diffusion of aluminum with or without boron
HITACHI LTD35 citations92
US4154632AMay 15, 1979
Method of diffusing aluminum into silicon substrate for manufacturing semiconductor device
HITACHI LTD40 citations92
US5417853AMay 23, 1995
Liquid chromatographic system and operation method
HITACHI LTD33 citations91
US5266815ANov 30, 1993
Semiconductor integrated circuit device having superconductive layer and isolation member with nitride isolation
HITACHI LTD20 citations82
US5449534ASep 12, 1995
Method for forming an anti-reflection film of a cathode-ray tube, an apparatus used for carrying out the method and a cathode-ray tube having the anti-reflection film
HITACHI LTD18 citations81
US4901134AFeb 13, 1990
Semiconductor device and manufacturing method thereof
HITACHI LTD14 citations74
US4794445ADec 27, 1988
Semiconductor device
HITACHI LTD13 citations74
US4484214ANov 20, 1984
pn Junction device with glass moats and a channel stopper region of greater depth than the base pn junction depth
HITACHI LTD18 citations74
US4040084AAug 2, 1977
Semiconductor device having high blocking voltage with peripheral circular groove
HITACHI LTD16 citations74
US3994011ANov 23, 1976
High withstand voltage-semiconductor device with shallow grooves between semiconductor region and field limiting rings
HITACHI LTD10 citations74
US5817421AOct 6, 1998
Method for forming and anti-reflection film of a cathode-ray tube, an apparatus used for carrying out the method and a cathode-ray tube having the anti-reflection film
HITACHI LTD7 citations73
US3984859AOct 5, 1976
High withstand voltage semiconductor device with shallow grooves between semiconductor region and field limiting rings with outer mesa groove
HITACHI LTD16 citations73
US5348649ASep 20, 1994
Apparatus for measuring glycohemoglobin
HITACHI LTD16 citations72
US4540603ASep 10, 1985
Resin-molded semiconductor device and a process for manufacturing the same
HITACHI LTD15 citations68
US4219373AAug 26, 1980
Method of fabricating a semiconductor device
HITACHI LTD5 citations62