Inventor
PARK CHUROO
KR14 patents
⚠️ This page may combine multiple inventors who share the name “PARK CHUROO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
13 patentsUS5631871AMay 20, 1997
System for selecting one of a plurality of memory banks for use in an active cycle and all other banks for an inactive precharge cycle
SAMSUNG ELECTRONICS CO LTD84 citations97
US5590086ADec 31, 1996
Semiconductor memory having a plurality of I/O buses
SAMSUNG ELECTRONICS CO LTD92 citations97
US6343036B1Jan 29, 2002
Multi-bank dynamic random access memory devices having all bank precharge capability
SAMSUNG ELECTRONICS CO LTD41 citations96
US5933379AAug 3, 1999
Method and circuit for testing a semiconductor memory device operating at high frequency
SAMSUNG ELECTRONICS CO LTD79 citations96
US5838990ANov 17, 1998
Circuit in a semiconductor memory for programming operation modes of the memory
SAMSUNG ELECTRONICS CO LTD63 citations96
US5835956ANov 10, 1998
Synchronous dram having a plurality of latency modes
SAMSUNG ELECTRONICS CO LTD76 citations96
US5703828ADec 30, 1997
Semiconductor memory
SAMSUNG ELECTRONICS CO LTD52 citations96
US5621691AApr 15, 1997
Column redundancy circuit and method of semiconductor memory device
SAMSUNG ELECTRONICS CO LTD74 citations96
US5568445AOct 22, 1996
Synchronous semiconductor memory device with a write latency control function
SAMSUNG ELECTRONICS CO LTD101 citations96
US5384735AJan 24, 1995
Data output buffer of a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD60 citations96
US5579280ANov 26, 1996
Semiconductor memory device and method for gating the columns thereof
SAMSUNG ELECTRONICS CO LTD12 citations69
US5822270AOct 13, 1998
Circuit for generating internal column address suitable for burst mode
SAMSUNG ELECTRONICS CO LTD3 citations62
US5748639AMay 5, 1998
Multi-bit test circuits for integrated circuit memory devices and related methods
SAMSUNG ELECTRONICS CO LTD0 citations41