Inventor
MORADI BENHAM
US15 patents
Patents
15 patentsUS6635983B1Oct 21, 2003
Nitrogen and phosphorus doped amorphous silicon as resistor for field emission device baseplate
MICRON TECHNOLOGY INC17 citations92
US6259199B1Jul 10, 2001
Electrode structures, display devices containing the same, and methods of making the same
MICRON TECHNOLOGY INC10 citations82
US6224447B1May 1, 2001
Electrode structures, display devices containing the same, and methods for making the same
MICRON TECHNOLOGY INC13 citations82
US7097526B2Aug 29, 2006
Method of forming nitrogen and phosphorus doped amorphous silicon as resistor for field emission display device baseplate
MICRON TECHNOLOGY INC5 citations73
US6900586B2May 31, 2005
Electrode structures, display devices containing the same
MICRON TECHNOLOGY INC3 citations73
US6630781B2Oct 7, 2003
Insulated electrode structures for a display device
MICRON TECHNOLOGY INC5 citations73
US6422907B2Jul 23, 2002
Electrode structures, display devices containing the same, and methods for making the same
MICRON TECHNOLOGY INC8 citations73
US7504767B2Mar 17, 2009
Electrode structures, display devices containing the same
MICRON TECHNOLOGY INC2 citations62
USRE40490ESep 9, 2008
Method and apparatus for programmable field emission display
MICRON TECHNOLOGY INC4 citations62
US7329552B2Feb 12, 2008
Field effect transistor fabrication methods, field emission device fabrication methods, and field emission device operational methods
MICRON TECHNOLOGY INC0 citations52
US6726518B2Apr 27, 2004
Electrode structures, display devices containing the same, and methods for making the same
MICRON TECHNOLOGY INC0 citations52
US6344378B1Feb 5, 2002
Field effect transistors, field emission apparatuses, thin film transistors, and methods of forming field effect transistors
MICRON TECHNOLOGY INC0 citations52
US7239075B2Jul 3, 2007
Nitrogen and phosphorus doped amorphous silicon as resistor for field emission display device baseplate
MICRON TECHNOLOGY INC0 citations51
US6911766B2Jun 28, 2005
Nitrogen and phosphorus doped amorphous silicon as resistor for field emission display device baseplate
MICRON TECHNOLOGY INC0 citations51
US6504170B1Jan 7, 2003
Field effect transistors, field emission apparatuses, and a thin film transistor
MICRON TECHNOLOGY INC0 citations45