Inventor

HOSHI RYOJI

JP37 patents

⚠️ This page may combine multiple inventors who share the name “HOSHI RYOJI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HOSHI RYOJI

SHINETSU HANDOTAI KK

Silicon single crystal wafer and method for manufacturing the same

Apparatus for growing single crystal, method for producing single crystal utilizing the apparatus and single crystal

Method for preparing silicon single crystal and silicon single crystal

Method of manufacturing semiconductor silicon single crystal wafer

Epitaxial silicon wafer, method for producing the same and subtrate for epitaxial silicon wafer

Method for producing a single crystal

Method of evaluating lifetime related quality of semiconductor surface

Method for evaluation of spatial distribution of deep level concentration in semiconductor crystal

Method for controlling resistivity and N-type silicon single crystal

Method for evaluating concentration of defect in silicon single crystal substrate

Method for evaluating silicon single crystal and method for manufacturing silicon single crystal

Silicon single crystal and method for producing the same

Method of producing silicon single crystal

Method of evaluating a silicon single crystal

Silicon wafer for epitaxial growth, an epitaxial wafer, and a method for producing it

Method for producing a silicon single crystal doped with nitrogen and having a controlled amount of carbon impurities

Silicon wafer and method for producing silicon single crystal

Method of producing silicon single crystal, and silicon single crystal wafer

Epitaxial wafer and manufacturing method thereof

Heater for manufacturing a crystal

Method for heat treatment of silicon single crystal wafer

Method for heat treatment of silicon single crystal wafer

Method for heat treatment of silicon single crystal wafer

Method for producing a silicon single crystal and a silicon single crystal

Single crystal, single crystal wafer, epitaxial wafer, and method of growing single crystal

Apparatus and method for producing silicon semiconductor single crystal

Method of manufacturing silicon epitaxial wafer

Method for manufacturing a defect-controlled low-oxygen concentration silicon single crystal wafer

Silicon single crystal growing apparatus and method for growing silicon single crystal

Method for growing silicon single crystal

HOSHI RYOJI

Method for measuring distance between lower end surface of heat insulating member and surface of raw material melt and method for controlling thereof

Apparatus for producing single crystal

Method for producing single crystal and a method for producing annealed wafer

SUGAWARA KOSEI

Method for measuring and controlling distance between lower end surface of heat shielding member and surface of raw material melt and method for manufacturing silicon single crystal

Single crystal growth method and single crystal pulling apparatus

FUSEGAWA IZUMI

Silicon wafer and method for producing the same

TAKANO KIYOTAKA

Apparatus and method for producing single crystals