Inventor
BINDER ROBERT
DE25 patents
⚠️ This page may combine multiple inventors who share the name “BINDER ROBERT”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
PORSCHE AG
6 patentsUS4832664AMay 23, 1989
Guide rail for drive chains
PORSCHE AG128 citations95
US4716864AJan 5, 1988
Camshaft drive for an internal combustion engine
PORSCHE AG29 citations92
US4657043AApr 14, 1987
Oil pressure regulating valve
PORSCHE AG22 citations82
US4151756AMay 1, 1979
Tensioning device for gear belts, chains and the like
PORSCHE AG21 citations82
US4660512AApr 28, 1987
Air-cooled multi-cylinder internal combustion engine
PORSCHE AG13 citations73
US4729346AMar 8, 1988
Air-cooled multi-cylinder internal combustion engine
PORSCHE AG0 citations52
GLOBALFOUNDRIES INC
4 patentsUS9269785B2Feb 23, 2016
Semiconductor device with ferroelectric hafnium oxide and method for forming semiconductor device
GLOBALFOUNDRIES INC15 citations83
US8383500B2Feb 26, 2013
Semiconductor device formed by a replacement gate approach based on an early work function metal
GLOBALFOUNDRIES INC5 citations72
US8343837B2Jan 1, 2013
Work function adjustment in a high-k gate electrode structure after transistor fabrication by using lanthanum
GLOBALFOUNDRIES INC4 citations62
US8440559B2May 14, 2013
Work function adjustment in high-K metal gate electrode structures by selectively removing a barrier layer
GLOBALFOUNDRIES INC4 citations61
BINDER GMBH
3 patentsUS10900572B2Jan 26, 2021
Valve device
BINDER GMBH1 citations62
US10697560B2Jun 30, 2020
Valve mechanism for controlling a fluid, in particular an abrasive high-viscosity material
BINDER GMBH0 citations41
US9644751B2May 9, 2017
Three-dimensional flow-optimized control slider system with linear control behavior
BINDER GMBH0 citations41
CARTER RICHARD
2 patentsUS8653605B2Feb 18, 2014
Work function adjustment in a high-K gate electrode structure after transistor fabrication by using lanthanum
CARTER RICHARD6 citations83
US8445344B2May 21, 2013
Uniform high-k metal gate stacks by adjusting threshold voltage for sophisticated transistors by diffusing a metal species prior to gate patterning
CARTER RICHARD17 citations82