Inventor

SHIMABUKURO SEIJI

JP30 patents

⚠️ This page may combine multiple inventors who share the name “SHIMABUKURO SEIJI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SHIMABUKURO SEIJI

SANDISK TECHNOLOGIES LLC

Method of suppressing epitaxial growth in support openings and three-dimensional memory device containing non-epitaxial support pillars in the support openings

Multi-tier three-dimensional memory device with stress compensation structures and method of making thereof

Resistive RAM including air gaps between word lines and between vertical bit lines

Method of operating memory array having divided apart bit lines and partially divided bit line selector switches

Three-dimensional memory device containing support pillars underneath a retro-stepped dielectric material and method of making thereof

Three-dimensional memory device containing offset column stairs and method of making the same

Method of fabricating memory array having divided apart bit lines and partially divided bit line selector switches

Three dimensional memory device having well contact pillar and method of making thereof

Vertical thin film transistor selection devices and methods of fabrication

Method for forming hydrogen-passivated semiconductor channels in a three-dimensional memory device

Three-dimensional resistive random access memory device containing selectively grown amorphous silicon-containing barrier and method of making the same

Three-dimensional memory device with finned support pillar structures and methods for forming the same

Three-dimensional memory device containing bridges for enhanced structural support and methods of forming the same

Three-dimensional memory device with backside support pillar structures and methods of forming the same

Contact via structure including a barrier metal disc for low resistance contact and methods of making the same

Three-dimensional memory device with backside support pillar structures and methods of forming the same

Three-dimensional memory device and method of making thereof using double pitch word line formation

Three-dimensional memory device and method of making thereof using double pitch word line formation

Three-dimensional memory device and method of making thereof using double pitch word line formation

Method and apparatus for depositing a multi-sector film on backside of a semiconductor wafer

Method and apparatus for depositing a multi-sector film on backside of a semiconductor wafer

Three-dimensional memory device containing auxiliary support pillar structures and method of making the same

SANDISK TECHNOLOGIES INC

Three dimensional memory device having well contact pillar and method of making thereof

Floating gate ultrahigh density vertical NAND flash memory

Three-dimensional memory structure employing air gap isolation

Bottom recess process for an outer blocking dielectric layer inside a memory opening

Set of stepped surfaces formation for a multilevel interconnect structure

Method of reducing control gate electrode curvature in three-dimensional memory devices

SANDISK 3D LLC

Vertical thin film transistor selection devices and methods of fabrication

Memory array having divided apart bit lines and partially divided bit line selector switches