Inventor
HEO INKYOUNG
KR5 patents
Patents
5 patentsUS11665883B2May 30, 2023
Semiconductor memory device having spacer capping pattern disposed between burried dielectic pattern and an air gap and method of fabricating same
SAMSUNG ELECTRONICS CO LTD10 citations84
US11282787B2Mar 22, 2022
Semiconductor devices having improved electrical characteristics and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations72
US11929324B2Mar 12, 2024
Semiconductor devices having improved electrical characteristics and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11658117B2May 23, 2023
Semiconductor devices having improved electrical characteristics and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11688779B2Jun 27, 2023
Semiconductor memory device and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations50