Inventor
YU CHEN-HUA DOUGLAS
TW22 patents
⚠️ This page may combine multiple inventors who share the name “YU CHEN-HUA DOUGLAS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
19 patentsUS5679606AOct 21, 1997
method of forming inter-metal-dielectric structure
TAIWAN SEMICONDUCTOR MFG361 citations98
US5654233AAug 5, 1997
Step coverage enhancement process for sub half micron contact/via
TAIWAN SEMICONDUCTOR MFG102 citations98
US6015749AJan 18, 2000
Method to improve adhesion between copper and titanium nitride, for copper interconnect structures, via the use of an ion implantation procedure
TAIWAN SEMICONDUCTOR MFG104 citations97
US6004883ADec 21, 1999
Dual damascene patterned conductor layer formation method without etch stop layer
TAIWAN SEMICONDUCTOR MFG67 citations96
US5744395AApr 28, 1998
Low resistance, self-aligned, titanium silicide structures, using a single rapid thermal anneal procedure
TAIWAN SEMICONDUCTOR MFG79 citations96
US5674783AOct 7, 1997
Method for improving the chemical-mechanical polish (CMP) uniformity of insulator layers
TAIWAN SEMICONDUCTOR MFG58 citations96
US6072237AJun 6, 2000
Borderless contact structure
TAIWAN SEMICONDUCTOR MFG28 citations92
US5904563AMay 18, 1999
Method for metal alignment mark generation
TAIWAN SEMICONDUCTOR MFG30 citations92
US5840624ANov 24, 1998
Reduction of via over etching for borderless contacts
TAIWAN SEMICONDUCTOR MFG43 citations92
US5833817ANov 10, 1998
Method for improving conformity and contact bottom coverage of sputtered titanium nitride barrier layers
TAIWAN SEMICONDUCTOR MFG54 citations92
US5747381AMay 5, 1998
Technique for the removal of residual spin-on-glass (SOG) after full SOG etchback
TAIWAN SEMICONDUCTOR MFG50 citations92
US5728619AMar 17, 1998
Selective reactive Ion etch (RIE) method for forming a narrow line-width high aspect ratio via through an integrated circuit layer
TAIWAN SEMICONDUCTOR MFG36 citations92
US5654234AAug 5, 1997
Method for forming a void-free tungsten-plug contact in the presence of a contact opening overhang
TAIWAN SEMICONDUCTOR MFG42 citations92
US5622894AApr 22, 1997
Process to minimize a seam in tungsten filled contact holes
TAIWAN SEMICONDUCTOR MFG31 citations92
US5702980ADec 30, 1997
Method for forming intermetal dielectric with SOG etchback and CMP
TAIWAN SEMICONDUCTOR MFG33 citations87
US6083829AJul 4, 2000
Use of a low resistivity Cu3 Ge interlayer as an adhesion promoter between copper and tin layers
TAIWAN SEMICONDUCTOR MFG16 citations83
US5955787ASep 21, 1999
Method for forming intermetal dielectric with SOG etchback and CMP
TAIWAN SEMICONDUCTOR MFG9 citations74
US5904559AMay 18, 1999
Three dimensional contact or via structure with multiple sidewall contacts
TAIWAN SEMICONDUCTOR MFG12 citations74
US5817571AOct 6, 1998
Multilayer interlevel dielectrics using phosphorus-doped glass
TAIWAN SEMICONDUCTOR MFG10 citations74