Inventor · disambiguated record
Yasuhiro Sambonsugi
Also filed as: SAMBONSUGI YASUHIRO
3 granted patents·10 citations·filing 2002–2007
59Inventor score
Technology areasH10D
Top patents by PatentIndex Score
3 records- 0155US6690071B2Semiconductor device using junction leak currentFUJITSU LTD·Filed 2002·Granted Feb 10, 2004·9 cites·14 claims
- 0238US7285449B2Semiconductor device manufacture method including process of implanting impurity into gate electrode independently from source /drain and semiconductor device manufactured by the methodFUJITSU LTD·Filed 2002·Granted Oct 23, 2007·1 cites·8 claims
- 0337US8088666B2Semiconductor device manufacture method including process of implanting impurity into gate electrode independently from source/drain and semiconductor device manufactured by the methodSAMBONSUGI YASUHIRO·Filed 2007·Granted Jan 3, 2012·0 cites·5 claims
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