Inventor

LIN SUNG-EN

TW27 patents

⚠️ This page may combine multiple inventors who share the name “LIN SUNG-EN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LIN SUNG-EN

TAIWAN SEMICONDUCTOR MFG CO LTD

Germanium hump reduction

Semiconductor device with a core-shell feature and method for forming the same

Dielectric isolation structure for multi-gate transistors

High aspect ratio gap fill

Semiconductor device and method

Semiconductor device and method

FinFET device with oxidation-resist STI liner structure

Hardmask formation with hybrid materials in semiconductor device

Method for manufacturing semiconductor device

Semiconductor device and method of manufacture

Gapfill structure and manufacturing methods thereof

Method for forming hardmask formation by hybrid materials in semiconductor device

Semiconductor device and manufacturing method thereof

Gapfill structure and manufacturing methods thereof

Semiconductor device structure and method for forming the same

Dielectric isolation structure for multi-gate transistors

Semiconductor device and methods of forming the same

Dielectric isolation structure for multi-gate transistors

Patterning semiconductor devices and structures resulting therefrom

Patterning semiconductor devices and structures resulting therefrom

Germanium hump reduction

Semiconductor device and method

Semiconductor devices and methods of manufacture

Back-trench isolation structure

Isolation structure for transistors

UNIV NAT TAIWAN

Cerium-based oxide fiber and its fabricating method

WEI WEN-CHENG

Mono-dispersive spherical indium oxide-based particles and method for producing the same