Inventor
HSIEH CHANG-MING
US34 patents
⚠️ This page may combine multiple inventors who share the name “HSIEH CHANG-MING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
33 patentsUS5528062AJun 18, 1996
High-density DRAM structure on soi
IBM307 citations99
US5466625ANov 14, 1995
Method of making a high-density DRAM structure on SOI
IBM240 citations99
US5774411AJun 30, 1998
Methods to enhance SOI SRAM cell stability
IBM206 citations98
US5729039AMar 17, 1998
SOI transistor having a self-aligned body contact
IBM100 citations97
US5405795AApr 11, 1995
Method of forming a SOI transistor having a self-aligned body contact
IBM110 citations97
US6107141AAug 22, 2000
Flash EEPROM
IBM83 citations96
US5910912AJun 8, 1999
Flash EEPROM with dual-sidewall gate
IBM76 citations96
US5366923ANov 22, 1994
Bonded wafer structure having a buried insulation layer
IBM54 citations96
US5313094AMay 17, 1994
Thermal dissipation of integrated circuits using diamond paths
IBM134 citations96
US5276338AJan 4, 1994
Bonded wafer structure having a buried insulation layer
IBM68 citations95
US5340759AAug 23, 1994
Method of making a vertical gate transistor with low temperature epitaxial channel
IBM41 citations93
US5283456AFeb 1, 1994
Vertical gate transistor with low temperature epitaxial channel
IBM37 citations93
US5962895AOct 5, 1999
SOI transistor having a self-aligned body contact
IBM31 citations92
US5874764AFeb 23, 1999
Modular MOSFETS for high aspect ratio applications
IBM30 citations92
US5567553AOct 22, 1996
Method to suppress subthreshold leakage due to sharp isolation corners in submicron FET structures
IBM20 citations92
US5521399AMay 28, 1996
Advanced silicon on oxide semiconductor device structure for BiCMOS integrated circuit
IBM24 citations92
US5484738AJan 16, 1996
Method of forming silicon on oxide semiconductor device structure for BiCMOS integrated circuits
IBM34 citations92
US5389559AFeb 14, 1995
Method of forming integrated interconnect for very high density DRAMs
IBM46 citations92
US5315151AMay 24, 1994
Transistor structure utilizing a deposited epitaxial base region
IBM34 citations92
US5258640ANov 2, 1993
Gate controlled Schottky barrier diode
IBM24 citations92
US5235206AAug 10, 1993
Vertical bipolar transistor with recessed epitaxially grown intrinsic base region
IBM39 citations92
US5137840AAug 11, 1992
Vertical bipolar transistor with recessed epitaxially grown intrinsic base region
IBM46 citations92
US4965217AOct 23, 1990
Method of making a lateral transistor
IBM24 citations92
US6144081ANov 7, 2000
Method to suppress subthreshold leakage due to sharp isolation corners in submicron FET structures
IBM22 citations91
US5202272AApr 13, 1993
Field effect transistor formed with deep-submicron gate
IBM45 citations89
US5446312AAug 29, 1995
Vertical-gate CMOS compatible lateral bipolar transistor
IBM19 citations80
US5721144AFeb 24, 1998
Method of making trimmable modular MOSFETs for high aspect ratio applications
IBM9 citations73
US5043786AAug 27, 1991
Lateral transistor and method of making same
IBM8 citations73
US5371022ADec 6, 1994
Method of forming a novel vertical-gate CMOS compatible lateral bipolar transistor
IBM11 citations71
US5385850AJan 31, 1995
Method of forming a doped region in a semiconductor substrate utilizing a sacrificial epitaxial silicon layer
IBM3 citations62
US5341023AAug 23, 1994
Novel vertical-gate CMOS compatible lateral bipolar transistor
IBM2 citations62
US5045911ASep 3, 1991
Lateral PNP transistor and method for forming same
IBM1 citations50
US4996164AFeb 26, 1991
Method for forming lateral PNP transistor
IBM1 citations50