P

Inventor

HSIEH CHANG-MING

US34 patents
⚠️ This page may combine multiple inventors who share the name “HSIEH CHANG-MING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

33 patents
US5528062AJun 18, 1996

High-density DRAM structure on soi

IBM307 citations99
US5466625ANov 14, 1995

Method of making a high-density DRAM structure on SOI

IBM240 citations99
US5774411AJun 30, 1998

Methods to enhance SOI SRAM cell stability

IBM206 citations98
US5729039AMar 17, 1998

SOI transistor having a self-aligned body contact

IBM100 citations97
US5405795AApr 11, 1995

Method of forming a SOI transistor having a self-aligned body contact

IBM110 citations97
US6107141AAug 22, 2000

Flash EEPROM

IBM83 citations96
US5910912AJun 8, 1999

Flash EEPROM with dual-sidewall gate

IBM76 citations96
US5366923ANov 22, 1994

Bonded wafer structure having a buried insulation layer

IBM54 citations96
US5313094AMay 17, 1994

Thermal dissipation of integrated circuits using diamond paths

IBM134 citations96
US5276338AJan 4, 1994

Bonded wafer structure having a buried insulation layer

IBM68 citations95
US5340759AAug 23, 1994

Method of making a vertical gate transistor with low temperature epitaxial channel

IBM41 citations93
US5283456AFeb 1, 1994

Vertical gate transistor with low temperature epitaxial channel

IBM37 citations93
US5962895AOct 5, 1999

SOI transistor having a self-aligned body contact

IBM31 citations92
US5874764AFeb 23, 1999

Modular MOSFETS for high aspect ratio applications

IBM30 citations92
US5567553AOct 22, 1996

Method to suppress subthreshold leakage due to sharp isolation corners in submicron FET structures

IBM20 citations92
US5521399AMay 28, 1996

Advanced silicon on oxide semiconductor device structure for BiCMOS integrated circuit

IBM24 citations92
US5484738AJan 16, 1996

Method of forming silicon on oxide semiconductor device structure for BiCMOS integrated circuits

IBM34 citations92
US5389559AFeb 14, 1995

Method of forming integrated interconnect for very high density DRAMs

IBM46 citations92
US5315151AMay 24, 1994

Transistor structure utilizing a deposited epitaxial base region

IBM34 citations92
US5258640ANov 2, 1993

Gate controlled Schottky barrier diode

IBM24 citations92
US5235206AAug 10, 1993

Vertical bipolar transistor with recessed epitaxially grown intrinsic base region

IBM39 citations92
US5137840AAug 11, 1992

Vertical bipolar transistor with recessed epitaxially grown intrinsic base region

IBM46 citations92
US4965217AOct 23, 1990

Method of making a lateral transistor

IBM24 citations92
US6144081ANov 7, 2000

Method to suppress subthreshold leakage due to sharp isolation corners in submicron FET structures

IBM22 citations91
US5202272AApr 13, 1993

Field effect transistor formed with deep-submicron gate

IBM45 citations89
US5446312AAug 29, 1995

Vertical-gate CMOS compatible lateral bipolar transistor

IBM19 citations80
US5721144AFeb 24, 1998

Method of making trimmable modular MOSFETs for high aspect ratio applications

IBM9 citations73
US5043786AAug 27, 1991

Lateral transistor and method of making same

IBM8 citations73
US5371022ADec 6, 1994

Method of forming a novel vertical-gate CMOS compatible lateral bipolar transistor

IBM11 citations71
US5385850AJan 31, 1995

Method of forming a doped region in a semiconductor substrate utilizing a sacrificial epitaxial silicon layer

IBM3 citations62
US5341023AAug 23, 1994

Novel vertical-gate CMOS compatible lateral bipolar transistor

IBM2 citations62
US5045911ASep 3, 1991

Lateral PNP transistor and method for forming same

IBM1 citations50
US4996164AFeb 26, 1991

Method for forming lateral PNP transistor

IBM1 citations50

COOK ROBERT K

1 patent